IXGA7N60C IXYS, IXGA7N60C Datasheet
IXGA7N60C
Manufacturer Part Number
IXGA7N60C
Description
IGBT 600V 14A TO-263
Manufacturer
IXYS
Series
HiPerFAST™, Lightspeed 2™r
Datasheet
1.IXGP7N60C.pdf
(2 pages)
Specifications of IXGA7N60C
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 7A
Current - Collector (ic) (max)
14A
Power - Max
54W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
14
Ic90, Tc=90°c, Igbt, (a)
7
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
45
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.22
Rthjc, Max, Igbt, (°c/w)
2.3
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-263 (D2 PAK)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXGA7N60C
Manufacturer:
IXYS
Quantity:
18 000
HiPerFAST
Lightspeed
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
Symbol
BV
V
I
I
V
© 2002 IXYS All rights reserved
CM
C25
C90
CES
GES
J
JM
stg
CGR
GEM
C
GE(th)
CE(sat)
CES
GES
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 300 H
T
Mounting torque, (TO-220)
TO-220
TO-263
Test Conditions
I
I
V
V
V
I
C
C
C
C
C
C
C
GE
J
J
CE
CE
GE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250 A, V
= 250 A, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
, V
TM
TM
GE
GE
CES
VJ
= ±20 V
= 15 V
= 125°C, R
CE
GE
= V
= 0 V
IGBT
Series
GE
T
T
GE
J
J
= 25°C
= 125°C
= 1 M
G
(T
= 22
J
= 25°C, unless otherwise specified)
M3
M3.5
IXGA 7N60C
IXGP 7N60C
600
2.5
min.
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
typ.
2.0
I
0.55/5 Nm/lb.in.
0.45/4 Nm/lb.in.
CM
= 14
600
600
±20
±30
150
300
CES
14
30
54
max.
±100
7
4
2
100
500
5.5
2.7
nA
V
V
V
V
V
V
V
A
A
A
A
W
C
C
C
C
A
A
g
g
Features
Applications
Advantages
V
I
V
t
G = Gate,
E = Emitter,
TO-220AB (IXGP)
TO-263 AA (IXGA)
C25
fi
International standard packages
JEDEC TO-263 surface
mountable and JEDEC TO-220 AB
High frequency IGBT
High current handling capability
HiPerFAST
MOS Gate turn-on
- drive simplicity
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
High power density
Suitable for surface mounting
Very low switching losses for high
frequency applications
CES
CE(sat)
G
G
C E
TM
E
HDMOS
C = Collector,
TAB = Collector
= 600
=
= 2.7
=
TM
14 A
45 ns
C (TAB)
98564A (06/02)
process
V
V
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IXGA7N60C Summary of contents
Page 1
... GE(th 0.8 • V CES CE CES ±20 V GES CE(sat) C C90 GE © 2002 IXYS All rights reserved IXGA 7N60C IXGP 7N60C Maximum Ratings 600 = 1 M 600 GE ±20 ± 0.8 V CES 54 -55 ... +150 150 -55 ... +150 300 M3 0.45/4 Nm/lb.in. M3.5 0.55/5 Nm/lb.in Characteristic Values (T = 25° ...
Page 2
... CE higher T or increased off R thJC R (TO-220) thCK IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max 500 50 ...