IXGA7N60BD1 IXYS, IXGA7N60BD1 Datasheet - Page 2

• Manufacturer Part Number: IXGA7N60BD1
• Description: IGBT 600V 14A TO-263
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGA7N60BD1

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 7A
• Current - Collector (ic) (max): 14A
• Power - Max: 80W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 14A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-263AA
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 14
• Ic90, Tc=90°c, Igbt, (a): 7
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 150
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.6
• Rthjc, Max, Igbt, (°c/w): 2.3
• If, Tj=110°c, Diode, (a): 7
• Rthjc, Max, Diode, (ºc/w): 1.6
• Package Style: TO-263 (D2 PAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

Reverse Diode (FRED)
Symbol
V
I
t
R
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
RM
rr
d(on)
d(off)
fi
d(on)
d(off)
fi
ri
ri
F
fs
off
on
off
thJC
ies
oes
res
g
thJC
thCK
ge
gc
Test Conditions
Test Conditions
I
Pulse test, t
C
I
V
L < 0.05
I
V
Diode
V
I
Inductive load, T
I
V
Remarks: Switching times may increase
for V
increased R
Inductive load, T
I
V
Remarks: Switching times may increase
for V
increased R
IGBT
F
= I
F
C
C
C
R
R
CE
CE
CE
= 1 A; -di/dt = 50 A/ s;
= I
= I
= I
= 10A; T
= 30 V T
C90
= 100 V; I
= 25 V, V
= 0.8 • V
= 0.8 • V
C90
C90
C90
CE
CE
; V
, V
, V
, V
(Clamp) > 0.8 • V
(Clamp) > 0.8 • V
CE
GE
GE
GE
300 s, duty cycle
T
= 10 V,
J
H; T
VJ
VJ
= 15 V, V
= 15 V
= 15 V
CES
CES
G
G
GE
= 25 C
F
= 150 C
= 25 C
= 0 V, f = 1 MHz
, R
, R
=25A; -di
VJ
J
J
G
G
= 25 C
= 100 C
= 125 C
= R
= R
CE
off
off
= 0.5 V
(T
(T
CES
CES
= 18
= 18
F
Min. Recommended Footprint
(Dimensions in inches and mm)
/dt = 100 A/ s
J
J
, higher T
, higher T
= 25 C, unless otherwise specified)
= 25 C, unless otherwise specified)
CES
2 %
J
J
or
or
min.
min.
Characteristic Values
Characteristic Values
4,835,592
4,850,072
3
0.15
0.50
typ.
500
100
150
200
250
typ.
0.3
0.6
35
50
17
25
15
10
10
10
10
15
2
7
4,881,106
4,931,844
max.
max.
1.56 K/W
1.96
2.95
200
250
0.6
2.5
1.6 K/W
5,017,508
5,034,796
K/W
mJ
mJ
mJ
nC
nC
nC
n s
pF
pF
pF
n s
n s
n s
n s
n s
n s
n s
n s
V
V
V
S
TO-220 AB Outline
TO-263 AA Outline
5,049,961
5,063,307
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
12.70
14.73
9.91
3.54
5.85
2.54
1.15
2.79
0.64
2.54
4.32
1.14
0.35
2.29
Min.
IXGA 7N60BD1
IXGP 7N60BD1
14.61
5,187,117
5,237,481
Min.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
2.29
1.02
1.27
0.46
Millimeter
Millimeter
0
13.97
16.00
10.66
Pins:
2 - Collector
4 - Collector
Max.
BSC
4.08
6.85
3.18
1.65
5.84
1.01
4.82
1.39
0.56
2.79
10.29
15.88
Max.
BSC
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
8.13
2.79
1.40
1.78
0.38
0.74
5,486,715
5,381,025
1. Gate
2. Collector
3. Emitter
4. Collector
0.500
0.580
0.390
0.139
0.230
0.100
0.045
0.110
0.025
0.100
0.170
0.045
0.014
0.090
Min.
Botton Side
Min.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
.018
Inches
Inches
0
1 - Gate
3 - Emitter
Bottom Side
0.550
0.630
0.420
0.161
0.270
0.125
0.065
0.230
0.040
0.190
0.055
0.022
0.110
Max.
BSC
Max.
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
.015
.029
BSC
6,306,728B1