IRG4IBC20WPBF International Rectifier, IRG4IBC20WPBF Datasheet

IGBT WARP 600V 11.8A TO220FP

IRG4IBC20WPBF

Manufacturer Part Number
IRG4IBC20WPBF
Description
IGBT WARP 600V 11.8A TO220FP
Manufacturer
International Rectifier
Datasheets

Specifications of IRG4IBC20WPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 6.5A
Current - Collector (ic) (max)
11.8A
Power - Max
34W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
11.8A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
34W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
*IRG4IBC20WPBF
Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR
Benefits
Features
• 2.5kV, 60s insulation voltage
• Industry standard Isolated TO-220 Fullpak
www.irf.com
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
C
C
LM
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
boost PFC topologies 150W and higher
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
CM
Supply and PFC (power factor correction)
Lower switching losses allow more cost-effective
Of particular benefit to single-ended converters and
Designed expressly for Switch-Mode Power
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Low conduction losses and minimal minority-carrier
applications
Lead-Free
STG
θJA
outline
CES
GE
ARV
D
D
J
θJC
ndustry-benchmark switching losses improve
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case - IGBT
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Parameter
Parameter
TM
G
n-channel
IRG4IBC20WPbF
300 (0.063 in. (1.6mm) from case )
2.0 (0.07)
Typ.
–––
–––
E
C
10 lbf•in (1.1N•m)
-55 to + 150
TO-220 FULLP AK
Max.
± 20
600
200
6.0
12
52
52
34
14
CE(on) typ.
Max.
GE
–––
3.7
65
CES
=
C
Units
Units
g (oz)
°C/W
mJ
°C
V
A
V
1

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IRG4IBC20WPBF Summary of contents

Page 1

... Soldering Temperature, for 10 seconds Mounting torque, 6- screw. Thermal Resistance Parameter R Junction-to-Case - IGBT θJC R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4IBC20WPbF n-channel TM TO-220 FULLP AK - 150 300 (0.063 in. (1.6mm) from case ) 10 lbf•in (1.1N•m) Typ. ––– ––– ...

Page 2

... IRG4IBC20WPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage „ (BR)ECS Temperature Coeff. of Breakdown Voltage ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance … fe CES I Gate-to-Emitter Leakage Current ...

Page 3

... Ideal diodes 0 0.1 1 100 150 C ° ° 20µs PULSE WIDTH Collector-to-Emitter Voltage (V) CE www.irf.com IRG4IBC20WPbF For both: Duty cycle: 50 125° 90°C sink Gate drive as specified Power Dissipation = 13W 10 f, Frequency (kHz) RMS 100 T = 150 15V Triangular wave: Clamp voltage: ...

Page 4

... IRG4IBC20WPbF 100 T , Case Temperature ( 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 4 3 15V PULSE WIDTH 2.0 1.0 125 150 -60 -40 -20 ° 0.001 0. Rectangular Pulse Duration (sec 6 3. 100 120 140 160 ° Junction Temperature ( C) ...

Page 5

... C res 800 oes ce gc 600 C ies 400 C oes 200 C res Collector-to-Emitter Voltage ( 480V 15V GE ° 6.5A C 0.14 0.13 0. Gate Resistance (Ohm) G www.irf.com IRG4IBC20WPbF SHORTED 100 0.1 0. -60 -40 -20 Ω = 400V = 6. Total Gate Charge (nC) G Ω = Ohm = 15V = 480V 6.5 ...

Page 6

... IRG4IBC20WPbF 0.8 Ω Ohm 150 C ° 480V 15V GE 0.6 0.4 0.2 0 Collector-to-emitter Current ( 100 SAFE OPERATING AREA 20V o = 125 C 10 100 , Collector-to-Emitter Voltage (V) www.irf.com 1000 ...

Page 7

... Driver same type as D.U.T 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. 50V 1000V Ã 10 90% 10 d(on) www.irf.com D.U. VCC D.U.T. Driver 90% t d(off t=5µ off off IRG4IBC20WPbF VCC ICM 480µF 7 ...

Page 8

... IRG4IBC20WPbF TO-220AB Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220AB Full-Pak Part Marking Information TO-220AB Full-Pak package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 DSAD'#B !#F Ã"#ÃÃÃÃÃÃÃÃÃ"! Data and specifications subject to change without notice ...

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