IRG4IBC30SPBF International Rectifier, IRG4IBC30SPBF Datasheet

IGBT STD 600V 23.5A TO220FP

IRG4IBC30SPBF

Manufacturer Part Number
IRG4IBC30SPBF
Description
IGBT STD 600V 23.5A TO220FP
Manufacturer
International Rectifier
Datasheets

Specifications of IRG4IBC30SPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.6V @ 15V, 18A
Current - Collector (ic) (max)
23.5A
Power - Max
45W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
23.5A
Collector Emitter Voltage Vces
1.6V
Power Dissipation Pd
45W
Collector Emitter Voltage V(br)ceo
600V
Transistor Case Style
TO-220FP
No. Of Pins
3
Rohs Compliant
Yes
Operating Temperature Range
-55°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
*IRG4IBC30SPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRG4IBC30SPBF
Quantity:
9 000
INSULATED GATE BIPOLAR TRANSISTOR
Benefits
Absolute Maximum Ratings
Thermal Resistance
Features
• Standard: Optimized for minimum saturation
• Generation 4 IGBT design provides tighter
• Industry standard TO-220 Full-Pak
• Lead-Free
• Generation 4 IGBTs offer highest efficiencies available
• IGBTs optimized for specific application conditions
• Designed to be a "drop-in" replacement for equivalent
www.irf.com
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
C
C
CM
LM
industry -standard Generation 3 IR IGBTs
parameter distribution and higher efficiency than
previous generation
J
STG
CES
GE
ARV
D
D
θJC
θJA
voltage and low operating freqencies (<1 kHz)
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Parameter

G
N-channel
IRG4IBC30SPbF
300 (0.063 in. (1.6mm) from case)
2.1 (0.075)
Typ.
–––
–––
E
C
TO-220 Full-Pak
-55 to + 150
23.5
13.0
± 20
600
47
47
10
45
18
@V
V
CE(on) typ.
Max.
V
GE
–––
2.8
65
CES
PD - 95637A
= 15V, I
= 600V
06/17/2010
= 1.4V
C
°C/W
Units
= 18A
g (oz)
mJ
°C
V
A
V
1

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IRG4IBC30SPBF Summary of contents

Page 1

... Storage Temperature Range STG Soldering Temperature, for 10 seconds Thermal Resistance Parameter R Junction-to-Case θJC R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4IBC30SPbF N-channel TO-220 Full-Pak  - 150 300 (0.063 in. (1.6mm) from case) Typ. ––– ––– 2.1 (0.075 95637A ...

Page 2

... IRG4IBC30SPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage „ (BR)ECS Temperature Coeff. of Breakdown Voltage ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance … fe CES I Gate-to-Emitter Leakage Current ...

Page 3

... Frequency ( kHz ) (Load Current = I of fundamental) RMS 100 T = 150 15V 0 Fig Typical Transfer Characteristics IRG4IBC30SPbF For both: For both: Duty cycle: 50% Duty cycle : 50 125° 125° 90°C Tsink = 90°C sink Gate drive as specified Gate drive as specified 5.8 Power Dissipation = 7.0W ...

Page 4

... IRG4IBC30SPbF 100 Junction Temperature (°C) Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3 15V 15V 80 us PULSE WIDTH 2.5 2.0 1.5 1 ...

Page 5

... Gate Resistance G G Fig Typical Switching Losses vs. Gate Resistance www.irf.com 1MHz = SHORTED ies 12 C oes C res 10 100 100 10 1 0.1 -60 -40 - (Ω) IRG4IBC30SPbF V = 400V 18A Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Emitter Voltage Ω 23Ohm 15V 480V 100 120 140 160 T , Junction Temperature ( C ) ° ...

Page 6

... IRG4IBC30SPbF 15.0 Ω 23Ohm 150 C ° 480V 15V 12.0 GE 9.0 6.0 3.0 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6 1000 V = 20V 125 C J 100 10 SAFE OPERATING AREA Fig Turn-Off SOA o 10 100 1000 , Collector-to-Emitter Voltage (V) www.irf.com ...

Page 7

... D.U. VCC D.U.T. Driver 90% t d(off t=5µ off off IRG4IBC30SPbF VCC ICM 480µF Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 480V Fig. 14b - Switching Loss Waveforms 7 ...

Page 8

... IRG4IBC30SPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAD'#BÃ DUCÃ6TT@H 7G`Ã GPUÃ8P9@Ã"#"! 6TT@H7G@9ÃPIÃ Ã!#Ã ((( DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅFÅ Note: "P" in assembly line position indicates " ...

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