IXGH6N170 IXYS, IXGH6N170 Datasheet
IXGH6N170
Specifications of IXGH6N170
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IXGH6N170 Summary of contents
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... GE(th 0.8 • V CES CE CES ± GES CE(sat) C C90 GE © 2006 IXYS All rights reserved IXGH 6N170 IXGT 6N170 Maximum Ratings 1700 = 1 MΩ 1700 GE ± 20 ± Ω 0.8 V -55 ... +150 150 -55 ... +150 300 260 1.13/10Nm/lb.in. TO-247 AD TO-268 Characteristic Values (T = 25°C unless otherwise specified) J min ...
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... off R thJC R (TO-247) thCK Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C unless otherwise specified) J min. ...
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... Fig. 3. Output Characteristics @ 125º Volts CE Fig. 5. Input Admittance 125º 25ºC - 40º 3.5 4 4 Volts GE © 2006 IXYS All rights reserved 30 = 15V GE 27 13V 11V 2.0 = 15V GE 13V 1.8 11V 1.6 1.4 9V 1.2 7V 1.0 0.8 0.6 - 4.5 4 3 ...
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... T = 125º Ω < 10V / 100 300 500 700 900 V - Volts CE IXYS reserves the right to change limits, test conditions, and dimensions. 1,000 100 10.0 1.0 0.1 1100 1300 1500 1700 0.0001 IXGH 6N170 IXGT 6N170 Fig. 8. Capacitance MHz C ies C oes C res 5 10 ...