IXGH36N60A3D4 IXYS, IXGH36N60A3D4 Datasheet

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IXGH36N60A3D4

Manufacturer Part Number
IXGH36N60A3D4
Description
IGBT 600V TO-247
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGH36N60A3D4

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.4V @ 15V, 30A
Current - Collector (ic) (max)
36A
Power - Max
220W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
36
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.4
Tfi, Typ, Tj=25°c, Igbt, (ns)
325
Eoff, Typ, Tj=125°c, Igbt, (mj)
5.3
Rthjc, Max, Igbt, (°c/w)
0.56
If, Tj=110°c, Diode, (a)
10
Rthjc, Max, Diode, (ºc/w)
2.5
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
GenX3
with Diode
Ultra Low Vsat PT IGBT for
up to 5kHz switching
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol Test Conditions
(T
V
I
I
V
© 2008 IXYS CORPORATION, All rights reserved
C110
F110
CM
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
= 25°C unless otherwise specified)
Test Conditions
I
V
V
V
I
TM
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load @ ≤ 600V
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque
C
C
C
J
C
C
C
C
CE
GE
CE
GE
= 25°C to 150°C, R
= 25°C to 150°C
= 110°C
= 110°C
= 25°C
= 25°C, 1ms
= 250μA, V
= 30A, V
= 0V, V
= 0.8 • V
= 0V
= 15V, T
600V IGBT
GE
GE
CES
VJ
= ± 20V
= 15V, Note 1
CE
= 125°C, R
= V
GE
GE
= 1MΩ
G
T
= 5Ω
J
= 125°C
Preliminary Technical Information
IXGH36N60A3D4
-55 ... +150
-55 ... +150
I
CM
Min.
Characteristic Values
1.13/10
3.0
Maximum Ratings
= 60
± 20
± 30
600
600
200
220
150
300
260
6.0
36
10
Typ.
±100 nA
Nm/lb.in.
Max.
500 μA
5.0
1.4
75 μA
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
V
g
V
I
V
TO-247 (IXGH)
G = Gate
E = Emitter
Features
Advantages
Applications
C110
Optimized for low conduction losses
Square RBSOA
Anti-parallel ultra fast diode
International standard package
High power density
Low gate drive requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
CES
CE(sat)
G
C
E
≤ ≤ ≤ ≤ ≤ 1.4V
= 600V
= 36A
C
TAB = Collector
(TAB)
DS99724A(07/08)
= Collector

Related parts for IXGH36N60A3D4

IXGH36N60A3D4 Summary of contents

Page 1

... V CES CE CES 0V ± 20V GES 30A 15V, Note 1 CE(sat © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXGH36N60A3D4 Maximum Ratings 600 = 1MΩ 600 ± 20 ± 200 = 5Ω 220 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6.0 Characteristic Values Min ...

Page 2

... Characteristic Values Min. Typ 150°C 1 100° 25° 100°C J 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH36N60A3D4 TO-247 (IXGH) Outline Max Dim. Millimeter ns Min. Max 4.7 A 2 1.0 b 1.65 2.13 ...

Page 3

... V = 15V GE 13V 1.3 11V 9V 1.2 1.1 7V 1.0 0.9 0.8 5V 0.7 1.2 1.4 1.6 1.8 2 25º IXGH36N60A3D4 Fig. 2. Extended Output Characteristics @ 25ºC 300 V = 15V GE 270 13V 11V 240 210 9V 180 150 120 Volts CE Fig. 4. Dependence of V Junction Temperature ...

Page 4

... IXYS reserves the right to change limits, test conditions and dimensions 40º 25ºC 10 125º 120 140 160 180 200 10,000 1,000 100 10 500 600 700 Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXGH36N60A3D4 Fig. 17. Gate Charge V = 600V 30A NanoCoulombs G Fig. 18. Capacitance MHz C ies C oes ...

Page 5

... GE 700 510 650 480 600 450 420 550 390 500 360 450 330 400 300 350 270 240 300 IXGH36N60A3D4 Fig. 13. Inductive Switching Energy Loss vs. Junction Temperature off 5Ω 15V 400V Degrees Centigrade J Fig ...

Page 6

... I - Amperes C IXYS reserves the right to change limits, test conditions and dimensions. 110 65 60 100 15A 100 110 120 25º IXGH36N60A3D4 Fig. 19. Inductive Turn-on Switching Times vs. Junction Temperature d(on 5Ω 15V 400V Degrees Centigrade 60A 30A 15A 105 115 125 IXYS REF: G_36N60A3(55) 07-03-08-A ...

Page 7

... A F 150 100 100 -di F Fig. 22. Reverse recovery charge 100°C VJ 100 V = 300 160 0 200 400 600 -di /dt F Fig. 25. Recovery time t versus - 0.01 0.1 t IXGH36N60A3D4 1000 0 200 400 A/μs /dt Fig. 23. Peak reverse current 100° 800 1000 0 200 400 A/μs /dt Fig. 26. Peak forward voltage V ...

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