IXGP20N60B IXYS, IXGP20N60B Datasheet - Page 4

• Manufacturer Part Number: IXGP20N60B
• Description: IGBT 40A 600V TO-220AB
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGP20N60B

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 150W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 24
• Ic90, Tc=90°c, Igbt, (a): 12
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.1
• Tfi, Typ, Tj=25°c, Igbt, (ns): 120
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.8
• Rthjc, Max, Igbt, (°c/w): 1.25
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

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0.001
0.01
Fig. 7. Dependence of E
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
0.00001
15
12
9
6
3
0
1
0
Fig. 11. IGBT Transient Thermal Resistance Junction-to-Case
0
D=0.02
D=0.5
D=0.2
D=0.1
D=0.05
D=0.01
T
V
R
J
I
CE
G
C
= 125°C
= 10
= 20A
= 300V
Fig. 9. Gate Charge
20
10


E
Q
(ON)
g
- nanocoulombs
I
E
40
C
Single pulse
20
(OFF)
- Amperes
0.0001
ON
60
30
and E
OFF
80
40
on I
C
.
100
0.001
50
Pulse Width - Seconds
6
5
4
3
2
1
0
100
0.1
40
10
0.01
1
4
3
2
1
0
0
0
Fig. 8. Dependence of E
Fig. 10. Turn-off Safe Operating Area
E
E
T
(ON)
E
(ON)
J
(ON)
T
R
dV/dt < 5V/ns
= 125°C
J
100
G
10
= -55 to +125°C
= 4.7


200
20
R
V
G
CE
I
I
I
- Ohms
0.1
C
C
C
300
- Volts
=40A
30
= 20A
= 10A
D = Duty Cycle
ON
400
IXGA 20N60B
IXGP 20N60B
40
and E
500
50
OFF
E
E
E
(OFF)
(OFF)
(OFF)
on R
600
60
1
8
6
4
2
0
G
.
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