IRG4PC40SPBF International Rectifier, IRG4PC40SPBF Datasheet

IGBT STD 600V 60A TO247AC

IRG4PC40SPBF

Manufacturer Part Number
IRG4PC40SPBF
Description
IGBT STD 600V 60A TO247AC
Manufacturer
International Rectifier
Type
Standardr
Datasheets

Specifications of IRG4PC40SPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.5V @ 15V, 31A
Current - Collector (ic) (max)
60A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Capacitance, Gate
2200 pF
Current, Collector
60 A
Energy Rating
15 mJ
Package Type
TO-247AC
Polarity
N-Channel
Power Dissipation
160 W
Resistance, Thermal, Junction To Case
0.77 °C/W
Speed, Switching
<1 kHz
Transistor Type
NPN
Voltage, Collector To Emitter Shorted
600 V
Voltage, Collector To Emitter, Saturation
1.68 V
Dc Collector Current
60A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
160W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Other names
*IRG4PC40SPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PC40SPBF
Manufacturer:
APT
Quantity:
5 000
Company:
Part Number:
IRG4PC40SPBF
Quantity:
2 400
INSULATED GATE BIPOLAR TRANSISTOR
Benefits
Absolute Maximum Ratings
Thermal Resistance
Features
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
www.irf.com
• Standard: Optimized for minimum saturation
• Generation 4 IGBT design provides tighter
• Industry standard TO-247AC package
• Lead-Free
R
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
C
C
CM
LM
Generation 3
parameter distribution and higher efficiency than
ARV
J
STG
θJC
θCS
θJA
CES
GE
D
D
industry-standard Generation 3 IR IGBT's
voltage and low operating frequencies ( < 1kHz)
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Parameter
Parameter
G
n-channel
IRG4PC40SPbF
300 (0.063 in. (1.6mm from case )
6 (0.21)
Typ.
0.24
–––
–––
E
C
10 lbf•in (1.1N•m)
-55 to + 150
Standard Speed IGBT
TO-247AC
Max.
± 20
600
120
120
160
60
31
15
65
V
@V
CE(on) typ.
Max.
0.77
V
–––
–––
GE
40
CES
= 15V, I
PD -95171
= 600V
= 1.32V
C
= 31A
Units
g (oz)
Units
°C/W
04/23/04
mJ
W
°C
V
V
A
1

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IRG4PC40SPBF Summary of contents

Page 1

... Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torque, 6- screw. Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4PC40SPbF Standard Speed IGBT C V CES V CE(on) typ 15V n-channel TO-247AC Max. 600 60 31 ...

Page 2

... IRG4PC40SPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage T (BR)ECS Temperature Coeff. of Breakdown Voltage — ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance Zero Gate Voltage Collector Current ...

Page 3

... V , Collector-to-Emitter Voltage ( Fig Typical Output Characteristics www.irf.com th ° riv ifie sip atio Fre ( fundamental; for triangular wave, I=I RMS 15V Fig Typical Transfer Characteristics IRG4PC40SPbF T rian g ular ° lta rated 150° 25° 50V C C 5µs PULSE WIDTH Gate-to-Emitter Voltage ( ...

Page 4

... IRG4PC40SPbF Case Temperature (°C) C Fig Maximum Collector Current vs. Case Temperature 0 0 .05 SIN 0 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 2 15V µ 1 -60 -40 - tio (°C ) Fig Collector-to-Emitter Voltage vs. Junction Temperature ectangular Pulse Duration (sec www.irf.com ...

Page 5

... C E Fig Typical Capacitance vs. Collector-to-Emitter Voltage 7 ° 7.7 C 7.6 7.5 7.4 7 ate R esistan ce ( Ω Fig Typical Switching Losses vs. Gate Resistance www.irf.com Fig Typical Gate Charge vs -60 -40 Fig Typical Switching Losses vs. IRG4PC40SPbF = Total rge ( Gate-to-Emitter Voltage = 10 Ω - nctio erature (° Junction Temperature ...

Page 6

... IRG4PC40SPbF Ω 150° 480V 15V Collector-to-Emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current ° TIN Collecto r-to-E m itter V oltage (V ) Fig Turn-Off SOA www.irf.com ...

Page 7

... Load Test Circuit 50V 1000V www.irf.com 480V .T. D river ff t=5µ IRG4PC40SPbF 480V 25° 480µF 960V Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 480V Fig. 14b - Switching Loss Waveforms 7 ...

Page 8

... IRG4PC40SPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information E XAMPLE : T HIS IS AN IRF PE 30 WIT EMB CODE 5657 35, 2000 LINE "H" Note: "P" in assembly line position indicates "Lead-Free" IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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