IRG4BC10KDPBF International Rectifier, IRG4BC10KDPBF Datasheet
IRG4BC10KDPBF
Specifications of IRG4BC10KDPBF
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IRG4BC10KDPBF Summary of contents
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... Junction-to-Case - IGBT θJC R Junction-to-Case - Diode θJC R Case-to-Sink, flat, greased surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4BC10KDPbF = 125° n-channel TM ultrafast, 300 (0.063 in. (1.6mm) from case) Min. ––– ––– ––– ––– ...
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Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltageƒ (BR)CES Temperature Coeff. of Breakdown Voltage ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th Forward ...
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Square wave: 60% of rated 3.0 voltage I 2.0 Ideal diodes 1.0 0.0 0.1 Fig Typical Load Current vs. Frequency 100 150 20µs ...
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T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.01 0.1 (THERMAL ...
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1MHz ies res oes ce gc 300 C ies 200 100 C oes C res 0 ...
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R = Ohm 150 C ° 480V 15V GE 1.5 1.0 0.5 0 Collector Current (A) C Fig Typical Switching Losses ...
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V = 200V 125° 25° 100 di /dt - (A/µs) f 200 V = 200V 125° 25°C J 160 I ...
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Same type device as D.U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on) GATE VOLTAGE D.U.T. ...
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Figure 18e. Macro Waveforms for L 1000V 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. ...
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Notes: Repetitive rating: V =20V; pulse width limited by maximum junction tem- GE perature (figure 20) ‚V =80%( =20V, L=10µ CES GE ƒPulse width ≤ 80µs; duty factor ≤ 0.1%. „Pulse width 5.0µs, single shot. 10.54 ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...