IXGH34N60B2 IXYS, IXGH34N60B2 Datasheet
IXGH34N60B2
Manufacturer Part Number
IXGH34N60B2
Description
IGBT 60A 600V TO-247AD
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet
1.IXGH34N60B2.pdf
(2 pages)
Specifications of IXGH34N60B2
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.55V @ 15V, 24A
Current - Collector (ic) (max)
70A
Power - Max
190W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
70A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
60
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
34
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.55
Tfi, Typ, Tj=25°c, Igbt, (ns)
150
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.2
Rthjc, Max, Igbt, (°c/w)
0.65
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXGH34N60B2
Manufacturer:
IXYS
Quantity:
18 000
HiPerFAST
Optimized for 10-25 KHz hard
switching and up to 150 KHz
resonant switching
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
Symbol
V
I
I
V
CM
C25
C110
GES
CES
J
JM
stg
© 2005 IXYS All rights reserved
GEM
C
GE(th)
CE(sat)
CES
CGR
GES
d
I
C
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load @ ≤ 600 V
T
Mounting torque (M3)
TO-247 AD
TO-268 SMD
Test Conditions
V
V
V
I
C
C
C
C
C
J
J
GE
CE
GE
CE
= 250 µA, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C (limited by leads)
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= V
= 0 V
= 0 V, V
= 24 A, V
CES
TM
VJ
GE
CE
GE
= 125°C, R
= ±20 V
= V
= 15 V
IGBT
GE
GE
= 1 MΩ
G
= 10 Ω
T
T
T
J
J
J
(T
= 25°C
= 150°C
= 25°C
J
= 25°C, unless otherwise specified)
Advance Technical Data
IXGH 34N60B2
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
I
1.13/10 Nm/lb.in.
CM
150
600
600
±20
±30
= 60
190
150
300
70
34
max.
±100
5.0
1.55
6
4
50
1
V
mA
nA
µA
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
g
g
TO-247 AD
G = Gate,
E = Emitter,
Features
Applications
(IXGH)
Medium frequency IGBT
Square RBSOA
High current handling capability
MOS Gate turn-on
- drive simplicity
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
V
I
V
t
C25
fi typ
CES
CE(sat)
G
C
E
C = Collector,
TAB = Collector
=
=
< 1.55 V
= 150 ns
600 V
DS99345(02/05)
70 A
C (TAB)
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IXGH34N60B2 Summary of contents
Page 1
... GE(th CES CE CES ± GES CE(sat © 2005 IXYS All rights reserved Advance Technical Data IXGH 34N60B2 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 150 = 10 Ω 190 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. Characteristic Values (T = 25°C, unless otherwise specified) J min ...
Page 2
... V, R d(off off R thJC R (TO-247) thCK IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. ...