IXGP24N60C IXYS, IXGP24N60C Datasheet
IXGP24N60C
Manufacturer Part Number
IXGP24N60C
Description
IGBT 48A 600V TO-220AB
Manufacturer
IXYS
Series
HiPerFAST™, Lightspeed 2™r
Datasheet
1.IXGP24N60C.pdf
(2 pages)
Specifications of IXGP24N60C
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 24A
Current - Collector (ic) (max)
48A
Power - Max
150W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220AB
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
48
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
24
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.1
Tfi, Typ, Tj=25°c, Igbt, (ns)
60
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.6
Rthjc, Max, Igbt, (°c/w)
0.83
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXGP24N60C
Manufacturer:
IXYS
Quantity:
15 500
HiPerFAST
Lightspeed
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
Symbol
BV
V
I
I
V
© 2002 IXYS All rights reserved
C25
C110
CM
CES
GES
GEM
J
JM
stg
GE(th)
CE(sat)
CES
CGR
GES
C
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 100 µH
T
Mounting torque (M3)
Test Conditions
I
I
V
V
V
I
C
C
C
J
J
C
C
C
C
GE
CE
GE
CE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250 µA, V
= 250 µA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C110
, V
TM
TM
VJ
GE
GE
CES
= 125°C, R
= ±20 V
= 15 V
GE
CE
Series
IGBT
= 0 V
= V
GE
GE
= 1 MΩ
G
= 22 Ω
T
T
(T
J
J
= 25°C
= 150°C
J
= 25°C, unless otherwise specified)
TO-263
TO-220
min.
600
2.5
Characteristic Values
IXGA 24N60C
IXGP 24N60C
-55 ... +150
-55 ... +150
Maximum Ratings
@ 0.8 V
typ.
2.1
I
1.13/10 Nm/lb.in.
CM
600
600
±20
±30
= 48
150
150
300
48
24
96
CES
max.
±100
2
4
200
2.5
5
1
mA
µA
nA
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
A
V
g
g
Features
Applications
Advantages
TO-220 AB (IXGP)
TO-263 AA (IXGA)
G = Gate,
E = Emitter,
International standard packages
JEDEC TO-247 and surface
mountable TO-268
High frequency IGBT
High current handling capability
Latest generation HDMOS
MOS Gate turn-on
- drive simplicity
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
High power density
Very fast switching speeds for high
frequency applications
V
I
V
t
C25
fi typ
CES
CE(sat)typ
G
C
G
E
E
C = Collector,
TAB = Collector
= 600 V
=
= 2.1 V
=
C (TAB)
TM
48 A
60 ns
98936 7/02)
C (TAB)
process
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IXGP24N60C Summary of contents
Page 1
... V GE(th 0.8 • V CES CE CES ± GES CE(sat) C C110 GE © 2002 IXYS All rights reserved IXGA 24N60C IXGP 24N60C Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± Ω 0.8 V CES 150 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. TO-263 2 TO-220 4 Characteristic Values (T = 25° ...
Page 2
... R thJC R thCK Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. ...