IRG4BC10UDPBF International Rectifier, IRG4BC10UDPBF Datasheet
IRG4BC10UDPBF
Specifications of IRG4BC10UDPBF
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IRG4BC10UDPBF Summary of contents
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Features Features Features Features • UltraFast: Optimized for high operating kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter ...
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IRG4BC10UD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) ...
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rate d volta 0.1 Fig Typical ...
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IRG4BC10UD 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.01 0.1 ...
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1MHz ies res 400 oes ies 300 200 C oes ...
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IRG4BC10UD 1.4 100 R = Ohm 150 C ° 480V 1 15V GE 1.0 0.8 0.6 0.4 0.2 0 Collector-to-emitter Current (A) C Fig. ...
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5° ° /dt - (A/µ s) ...
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IRG4BC10UD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on ...
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µ www.irf.com ...
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IRG4BC10UD Notes: Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE S Pulse width 80µs; duty factor 0.1%. T Pulse width 5.0µs, single ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...