IXGX12N90C IXYS, IXGX12N90C Datasheet
Home Discrete Semiconductor Products IGBTs - Single IXGX12N90C
Manufacturer Part Number
IXGX12N90C
Description
IGBT 24A 900V PLUS247
Series
HiPerFAST™, Lightspeed 2™r
Specifications of IXGX12N90C
Voltage - Collector Emitter Breakdown (max)
900V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 12A
Current - Collector (ic) (max)
24A
Power - Max
100W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Vces, (v)
900
Ic25, Tc=25°c, Igbt, (a)
24
Ic90, Tc=90°c, Igbt, (a)
12
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
3
Tfi, Typ, Tj=25°c, Igbt, (ns)
70
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.7
Rthjc, Max, Igbt, (°c/w)
1.25
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
HiPerFAST
Lightspeed
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
Symbol
BV
V
I
I
V
© 2003 IXYS All rights reserved
CM
C25
C90
CES
GES
J
JM
stg
CGR
GEM
C
GE(th)
CE(sat)
CES
GES
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
Mounting torque with screw M3
Mounting torque with screw M3.5
Test Conditions
I
I
V
V
V
I
C
C
C
J
J
C
C
C
GE
C
GE
CE
CE
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 90 C
= 25 C, 1 ms
= 15 V, T
= 25 C
= 250 A, V
= 250 A, V
= V
= 0 V
= 0 V, V
= I
CE90
CES
, V
TM
TM
GE
VJ
GE
= 20 V
= 125 C, R
IGBT
= 15 V
Series
GE
GE
= V
= 0 V
GE
GE
= 1 M
G
= 33
T
T
(T
J
J
J
= 25 C
= 125 C
= 25 C, unless otherwise specified)
min.
900
2.5
IXGH 12N90C
IXGX 12N90C
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
typ.
CM
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
= 24
900
900
100
150
300
20
30
24
12
48
CES
6
max.
100
100
5.0
1.5
3.0
mA
nA
V
W
g
V
V
C
C
C
C
A
V
V
V
V
A
A
A
A
TO-247 (IXGH)
PLUS 247 (IXGX)
G = Gate,
E = Emitter,
Features
Applications
Advantages
Very high frequency IGBT
New generation HDMOS
International standard package
High peak current handling capability
PFC circuit
AC motor speed control
DC servo and robot drives
Switch-mode and resonant-mode
power supplies
High power audio amplifiers
Fast switching speed
High power density
V
I
V
t
C25
fi(typ)
CES
CES(sat)
G
G
D
C
E
C = Collector,
TAB = Collector
=
=
=
=
900 V
98582B(03/03)
3.0 V
TM
24 A
70 ns
process
C (TAB)
(TAB)
Related parts for IXGX12N90C
IXGX12N90C Summary of contents
... 250 GE(th CES CE CES GES CE(sat) C CE90 GE © 2003 IXYS All rights reserved IXGH 12N90C IXGX 12N90C Maximum Ratings 900 = 1 M 900 0.8 V CES 100 -55 ... +150 150 -55 ... +150 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 300 6 Characteristic Values ( unless otherwise specified) J min. typ. max. ...
... increased off R thJC R TO-247 thCK PLUS 247 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max 780 ...
... Fig. 3. Saturation Voltage Characteristics @ 125 125 15V GE 13V 11V Volts CE Fig. 5. Admittance Curves 125 Volts GE © 2003 IXYS All rights reserved C Fig. 2. Extended Output Characteristics o 100 Fig. 4. Temperature Dependence of V 1.6 1.4 1.2 1.0 0 1000 100 IXGH 12N90C IXGX 12N90C 13V 15V 11V Volts 15V ...
... nanocoulombs 0.1 0.01 0.001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Fig. 8. Dependence OFF C 3.0 2.5 2.0 E (OFF) 1.5 1.0 0.5 0 Fig. 10. Turn-off Safe Operating Area ...
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