IXGT30N60B2 IXYS, IXGT30N60B2 Datasheet
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Manufacturer Part Number
IXGT30N60B2
Description
IGBT 600V 70A TO-268
Specifications of IXGT30N60B2
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 24A
Current - Collector (ic) (max)
70A
Power - Max
190W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
70
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
30
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
82
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.9
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFAST
Optimized for 10-25 KHz hard
switching and up to 150 KHz
resonant switching
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
Symbol
V
I
I
V
C25
C110
CM
GES
CES
GEM
C
J
JM
stg
GE(th)
CE(sat)
CES
CGR
GES
d
© 2003 IXYS All rights reserved
I
C
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load @ ≤ 600 V
T
Mounting torque (M3)
TO-247 AD
TO-268 SMD
Test Conditions
V
V
V
I
C
C
C
C
C
J
J
GE
CE
GE
CE
= 250 µA, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C (limited by leads)
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= V
= 0 V
= 0 V, V
= 24 A, V
CES
TM
VJ
GE
CE
GE
= 125°C, R
= ±20 V
= V
= 15 V
IGBT
GE
GE
= 1 MΩ
G
= 10 Ω
T
T
T
(T
J
J
J
= 25°C
= 150°C
= 25°C
J
= 25°C, unless otherwise specified)
Advance Technical Data
IXGH 30N60B2
IXGT 30N60B2
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
I
1.13/10 Nm/lb.in.
CM
150
600
600
±20
±30
= 60
190
150
300
70
30
max.
±100
5.0
6
4
1.8
50
1
V
mA
nA
µA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
g
g
V
TO-268
TO-247 AD
G = Gate,
E = Emitter,
Features
Applications
(IXGT)
(IXGH)
Medium frequency IGBT
Square RBSOA
High current handling capability
MOS Gate turn-on
- drive simplicity
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
V
I
V
t
C25
fi typ
CE(sat)
CES
G
C
G
E
C = Collector,
TAB = Collector
= 600 V
=
<
=
E
DS99122(11/03)
1.8 V
70 A
82 ns
C (TAB)
C (TAB)
Related parts for IXGT30N60B2
IXGT30N60B2 Summary of contents
... GE(th CES CE CES ±20 V GES CE(sat © 2003 IXYS All rights reserved Advance Technical Data IXGH 30N60B2 IXGT 30N60B2 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 150 = 10 Ω 190 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... R thJC R (TO-247) thCK Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. ...
... Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 4.2 3.9 3.6 3 48A C 3 24A 12A 2.7 2.4 2.1 1.8 1.5 1 Volts G E © 2003 IXYS All rights reserved 300 250 9V 200 7V 150 100 2.5 3 1.3 1.2 9V 1.1 7V 1.0 0.9 5V 0.8 0.7 2 2.5 3 ...
... CE 400 300 200 I = 48A C 100 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 C 1.8 1.6 1.4 1 125º ...
... T - Degrees Centigrade J Fig. 15. Capacitance 10000 MHz 1000 100 Volts C E 1.0 0.5 0.1 1 © 2003 IXYS All rights reserved 48A C 3 24A 12A 105 115 125 C ies C oes C res Fig. 16. Maxim um Transient Therm al Resistance 10 Pulse Width - milliseconds IXGH 30N60B2 IXGT 30N60B2 Fig ...
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