IRG4PH50UPBF International Rectifier, IRG4PH50UPBF Datasheet
IRG4PH50UPBF
Manufacturer Part Number
IRG4PH50UPBF
Description
IGBT UFAST 1200V 45A TO247AC
Manufacturer
International Rectifier
Type
Ultrafastr
Specifications of IRG4PH50UPBF
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 24A
Current - Collector (ic) (max)
45A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Capacitance, Gate
3600 pF
Current, Collector
45 A
Energy Rating
170 mJ
Package Type
TO-247AC
Polarity
N-Channel
Power Dissipation
200 W
Resistance, Thermal, Junction To Case
0.64 °C/W
Speed, Switching
40 kHz (Hard Switching), >200 kHz (Resonant Mode)
Transistor Type
NPN
Voltage, Collector To Emitter Shorted
1200 V
Voltage, Collector To Emitter, Saturation
3.2 V
Dc Collector Current
45A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
200W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Package
TO-247
Circuit
Discrete
Switching
Hard
Switching Speed
ULTRAFAST 8-30 kHz
Vces (v)
1200
Ic @ 25c (a)
45
Ic @ 100c (a)
24
Vce(on)@25c Typ (v)
2.78
Vce(on)@25c Max (v)
3.70
Ets Typ (mj)
1.94
Ets Max (mj)
2.6
Pd @25c (w)
200
Environmental Options
PbF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
*IRG4PH50UPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
INSULATED GATE BIPOLAR TRANSISTOR
• UltraFast: Optimized for high operating
• New IGBT design provides tighter
• Optimized for power conversion; SMPS, UPS
• Industry standard TO-247AC package
• Lead-Free
Benefits
• Higher switching frequency capability than
• Highest efficiency available
• Much lower conduction losses than MOSFETs
• More efficient than short circuit rated IGBTs
Absolute Maximum Ratings
Thermal Resistance
Features
V
I
I
I
I
V
E
P
P
T
T
R
R
R
Wt
competitive IGBTs
C
C
CM
LM
parameter distribution and higher efficiency than
previous generations
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
J
STG
and welding
CES
GE
ARV
D
D
θJC
θCS
θJA
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Parameter
Parameter
G
n-channel
IRG4PH50UPbF
300 (0.063 in. (1.6mm) from case )
6 (0.21)
Typ.
0.24
–––
–––
E
C
10 lbf•in (1.1N•m)
-55 to + 150
TO-247AC
Max.
1200
± 20
180
180
170
200
45
24
78
Ultra Fast Speed IGBT
V
@V
CE(on) typ.
V
Max.
GE
0.64
–––
–––
CES
40
= 15V, I
PD - 95191
= 1200V
= 2.78V
C
= 24A
Units
Units
g (oz)
°C/W
mJ
W
°C
V
A
V
1
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IRG4PH50UPBF Summary of contents
Page 1
... Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torque, 6- screw. Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight IRG4PH50UPbF Ultra Fast Speed IGBT C V CES V CE(on) typ 15V n-channel TO-247AC Max. 1200 45 ...
Page 2
... IRG4PH50UPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage T (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance Zero Gate Voltage Collector Current ...
Page 3
... IRG4PH50UPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" 8 INTERNAT IONAL RECTIFIER IRFPE30 LOGO ...