IRGB4061DPBF International Rectifier, IRGB4061DPBF Datasheet
IRGB4061DPBF
Specifications of IRGB4061DPBF
Related parts for IRGB4061DPBF
IRGB4061DPBF Summary of contents
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... R (Diode) Thermal Resistance Junction-to-Case-(each Diode) θJC R Thermal Resistance, Case-to-Sink (flat, greased surface) θCS R Thermal Resistance, Junction-to-Ambient (typical socket mount) θ n-channel G Gate Parameter e Parameter IRGB4061DPbF V = 600V CES I = 18A 100° ≥ 5μ 175°C SC J(max) V typ. = 1.65V CE(on TO-220AB C ...
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... IRGB4061DPbF Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ΔV /ΔT Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ΔV /ΔTJ Threshold Voltage temp. coefficient GE(th) gfe Forward Transconductance I Collector-to-Emitter Leakage Current ...
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... V CE (V) Fig Typ. IGBT Output Characteristics T = -40° 80μs J www.irf.com 10μsec 100μsec 1msec DC 1000 10000 =15V Fig Typ. IGBT Output Characteristics IRGB4061DPbF 250 200 150 100 100 120 140 160 180 T C (°C) Fig Power Dissipation vs. Case Temperature 100 100 V CE (V) Fig ...
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... IRGB4061DPbF 18V 80 VGE = 15V VGE = 12V 70 VGE = 10V VGE = 8. (V) Fig Typ. IGBT Output Characteristics T = 175° 80μ (V) Fig Typical -40° (V) Fig Typical 175° Fig Typ. Diode Forward Characteristics 9. 18A 36A 18A 36A 100 -40°c 80 25°C 175° ...
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... I F (A) Fig Typ. Diode 175°C J www.irf.com 22Ω 15V T = 175° 200μ 100 125 175° 200μ 18A 15V vs IRGB4061DPbF 1000 td OFF 100 (A) Fig Typ. Switching Time vs 400V 22Ω 1000 td OFF 100 100 R G (Ω) Fig Typ. Switching Time vs 400V 18A ...
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... IRGB4061DPbF 500 di F /dt (A/μs) Fig Typ. Diode 400V 15V 18A 400 Ω 350 300 Ω 250 47Ω 200 150 100 100 Ω (A) Fig Typ. Diode 175°C J 10000 1000 100 (V) Fig Typ. Capacitance vs 0V 1MHz GE 6 1000 1500 vs 175° ...
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... J τ J τ 1 τ 1 Ci= τi/Ri Ci 0.0001 Rectangular Pulse Duration (sec) τ J τ J τ 1 τ 1 Ci= τi/Ri Ci τi/Ri 1E-005 0.0001 Rectangular Pulse Duration (sec) IRGB4061DPbF R R τi (sec) Ri (°C/ τ 0.3193 0.000273 C τ τ 0.4104 0.004525 2 τ 2 i/Ri Notes: 1. Duty Factor D = t1/t2 2 ...
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... IRGB4061DPbF Fig.C.T.1 - Gate Charge Circuit (turn-off) 4x DUT Fig.C.T.3 - S.C. SOA Circuit R = DUT Rg Fig.C.T.5 - Resistive Load Circuit amp / DU T 360V VCC G force 80V Rg Fig.C.T.2 - RBSOA Circuit RIVER Rg Fig.C.T.4 - Switching Loss Circuit C force 400μH D1 10K C sense DUT 0.0075μ E sense E force Fig.C.T.6 - BVCES Filter Circuit www ...
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... Fig. CT.4 J www.irf.com -100 -5 -4.20 Fig. WF2 - Typ. Turn-on Loss Waveform 500 400 300 200 10% Peak I 100 RR -100 0.15 IRGB4061DPbF 600 500 tr 400 TEST C 300 90% test 200 10% test 100 -0.15 -0.05 0.05 0.15 0.25 Time (μ 175°C using Fig. CT.4 ...
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... IRGB4061DPbF EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 IN THE AS S EMBLY LINE "C" Note: "P" sembly line position indicates "Lead - Free" TO-220AB packages are not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...