IXGR48N60B3D1 IXYS, IXGR48N60B3D1 Datasheet - Page 2

• Manufacturer Part Number: IXGR48N60B3D1
• Description: IGBT 600V FRD ISOPLUS247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGR48N60B3D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 40A
• Current - Collector (ic) (max): 60A
• Power - Max: 150W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: ISOPLUS 247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 27
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.1
• Tfi, Typ, Tj=25°c, Igbt, (ns): 116
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.3
• Rthjc, Max, Igbt, (°c/w): 0.83
• If, Tj=110°c, Diode, (a): 27
• Rthjc, Max, Diode, (ºc/w): 1.5
• Package Style: ISOPLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED) (D1 Version ONLY)
V
I
t
R
R
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
rr
fs
on
off
on
off
ymbol
F
ies
oes
res
thJC
thCS
thJC
thCS
g
ge
gc
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
= 25°C unless otherwise specified)
Test Conditions
I
V
I
I
Inductive Load, T
I
V
Inductive Load, T
I
V
I
-di
I
C
C
F
C
C
F
F
CE
= 30A, V
CE
CE
= 30A, V
= 40A, V
PRELIMINARY TECHNICAL INFORMATION
= 30A, V
= 1A; -di/dt = 100A/μs, V
= 30A, V
= 30A, V
Test Conditions
F
/dt =100A/μs
= 25V, V
= 480V, R
= 480V, R
GE
CE
GE
GE
GE
GE
GE
= 0V, V
= 10V, Note 1
= 15V, V
= 0V, Note 1
= 15V
= 15V
G
G
4,835,592
4,881,106
= 0V, f = 1MHz
= 5Ω
= 5Ω
J
J
= 25°C
= 125°C
R
= 100V
CE
4,931,844
5,017,508
5,034,796
= 0.5 • V
R
= 30V
48N60B3D1
48N60B3
5,049,961
5,063,307
5,187,117
CES
(T
J
T
T
= 25°C, unless otherwise specified)
J
J
= 150°C
= 100°C
5,237,481
5,381,025
5,486,715
Min.
Characteristic Values
28
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
2980
0.15
0.66
0.84
1.71
1.30
170
200
115
130
116
190
157
21
40
22
25
19
25
46
45
Typ.
100
1.6
1.5
4
0.83 °C/W
Max.
1.20
200
200
6,404,065 B1
6,534,343
6,583,505
1.5 °C/W
Max.
2.8
°C/W
°C/W
mJ
mJ
mJ
nC
nC
nC
mJ
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
ISOPLUS247 (IXGR) Outline
6,727,585
6,771,478 B2 7,071,537
IXGR48N60B3
IXGR48N60B3D1
7,005,734 B2
7,063,975 B2
7,157,338B2