IXGT20N120BD1 IXYS, IXGT20N120BD1 Datasheet
IXGT20N120BD1
Specifications of IXGT20N120BD1
Related parts for IXGT20N120BD1
IXGT20N120BD1 Summary of contents
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... GE(th CES CE CES ± GES 20A CE(sat Note 2 © 2003 IXYS All rights reserved IXGH 20N120BD1 IXGT 20N120BD1 Maximum Ratings 1200 = 1 MΩ 1200 GE ±20 ± 100 = 10 Ω @0.8 V CES 190 -55 ... +150 150 -55 ... +150 (TO-247) 1.13/10 Nm/lb.in. 300 260 TO-247AD/TO-268 6/4 ...
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... T or increased R J Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min ...
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... V - Volts CE Fig. 3. Output Characteristics @ 125 Deg 0 2 Volts CE Fig. 5. Input Admittance -40º 25ºC 1 25º Volts GE © 2003 IXYS All rights reserved 3 3 IXGH 20N120BD1 IXGT 20N120BD1 Fig. 2. Extended Output Characteristics @ 25 deg Volts CE Fig. 4. Temperature Dependence 40A C 1 ...
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... Fig. 11. Reverse-Bias Safe Operating Area 90 80 º 125 Ohms G 60 dV/dT < 10V/ 300 500 700 V - Volts CE IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents off 40A 20A Temperature off I = 40A 20A C I ...
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... 120 °C 160 T VJ Fig. 16. Dynamic parameters versus K/W 0.1 Z thJC 0.01 0.001 0.00001 0.0001 0.001 Fig. 19. Transient thermal resistance junction to case © 2003 IXYS All rights reserved 100°C VJ µ 600V 60A 30A 15A 100 A/µs -di /dt F Fig. 14. Reverse recovery charge Q ...