IXGR50N60C2 IXYS, IXGR50N60C2 Datasheet

IGBT 600V 75A ISOPLUS247

IXGR50N60C2

Manufacturer Part Number
IXGR50N60C2
Description
IGBT 600V 75A ISOPLUS247
Manufacturer
IXYS
Series
HiPerFAST™, Lightspeed 2™r
Datasheet

Specifications of IXGR50N60C2

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 40A
Current - Collector (ic) (max)
75A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
36
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
48
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.74
Rthjc, Max, Igbt, (°c/w)
0.62
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
ISOPLUS247™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFAST
IGBT with Diode
© 2004 IXYS All rights reserved
C2-Class High Speed IGBTs
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
V
T
T
T
Weight
Symbol
V
I
I
V
C25
C110
CM
CES
GES
J
JM
stg
CGR
GEM
C
ISOL
GE(th)
CE(sat)
CES
GES
I
V
V
V
I
Note 1
C
C
GE
CE
CE
Test Conditions
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load @ V
T
50/60 Hz RMS, t = 1m
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
C
C
C
C
J
J
GE
= 250 µA, V
= V
= 0 V
= 0 V, V
= 40 A, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
CES
GE
GE
= ±20 V
TM
= 15 V
CE
VJ
= 125°C, R
= V
GE
GE
= 1 MΩ
G
= 10 Ω
T
T
T
T
CE
(T
J
J
J
J
J
= 25°C
= 125°C
= 25°C
= 125°C
≤ 600 V
= 25°C, unless otherwise specified)
IXGR 50N60C2
IXGR 50N60C2D1
3.0
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
I
CM
Typ.
1.8
= 100
2500
600
600
±20
±30
300
200
300
150
75
36
5
±100
Max.
650
5.0
2.7
5
mA
°C
°C
°C
°C
W
µA
nA
V
V
V
V
V
A
A
A
A
g
V
V
V
V
I
V
t
ISOPLUS247
(IXGR)
G = Gate
E = Emitter
Features
Applications
Advantages
C25
fi(typ)
Very high frequency IGBT and
Square RBSOA
High current handling capability
MOS Gate turn-on for drive simplicity
Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low I
Switch-mode and resonant-mode
power supplies
Uninterruptible power supplies (UPS)
DC choppers
AC motor speed control
DC servo and robot drives
Space savings (two devices in one
package)
Easy to mount with 1 screw
CES
CE(sat)
anti-parallel FRED in one package
C = Collector
= 600 V
=
= 2.7 V
=
75 A
48 ns
DS99163(04/04)
(ISOLATED TAB)
RM

Related parts for IXGR50N60C2

IXGR50N60C2 Summary of contents

Page 1

... V GE(th CES CE CES ± GES CE(sat Note 1 © 2004 IXYS All rights reserved IXGR 50N60C2 IXGR 50N60C2D1 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 300 = 10 Ω 100 G CM ≤ 600 V CE 200 2500 -55 ... +150 150 -55 ... +150 5 300 Characteristic Values (T = 25° ...

Page 2

... A; -di/dt = 200 A/ms thJC Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J Min ...

Page 3

... V - Volts CE Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 4.8 4.5 4 80A C 3.9 40A 20A 3.6 3.3 3 2.7 2 Volts G E © 2004 IXYS All rights reserved 320 9V 280 240 7V 200 160 6V 120 2.5 3 3.5 4 1.2 9V 1.1 7V 1.0 0.9 6V 0.8 0.7 0.6 5V 0.5 2 ...

Page 4

... I = 80A C 100 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 c 2.4 2.1 1.8 1.5 1 ...

Page 5

... Fig. 15. Gate Charge 300V 40A 10mA nanoCoulombs © 2004 IXYS All rights reserved 80A 20A 105 115 125 100 10000 1000 100 10 90 120 150 Fig . 16. M axim tan Puls e W idth - millis ec onds IXGR 50N60C2 IXGR 50N60C2D1 Fig. 14. Reverse-Bias Safe Operating Area º ...

Page 6

... K/W 0.1 Z thJC 0.01 0.001 0.0001 0.00001 0.0001 0.001 Fig. 24 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4000 T = 100° 300V nC R ...

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