IXGR50N60C2 IXYS, IXGR50N60C2 Datasheet
IXGR50N60C2
Specifications of IXGR50N60C2
Related parts for IXGR50N60C2
IXGR50N60C2 Summary of contents
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... V GE(th CES CE CES ± GES CE(sat Note 1 © 2004 IXYS All rights reserved IXGR 50N60C2 IXGR 50N60C2D1 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 300 = 10 Ω 100 G CM ≤ 600 V CE 200 2500 -55 ... +150 150 -55 ... +150 5 300 Characteristic Values (T = 25° ...
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... A; -di/dt = 200 A/ms thJC Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J Min ...
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... V - Volts CE Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 4.8 4.5 4 80A C 3.9 40A 20A 3.6 3.3 3 2.7 2 Volts G E © 2004 IXYS All rights reserved 320 9V 280 240 7V 200 160 6V 120 2.5 3 3.5 4 1.2 9V 1.1 7V 1.0 0.9 6V 0.8 0.7 0.6 5V 0.5 2 ...
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... I = 80A C 100 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 c 2.4 2.1 1.8 1.5 1 ...
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... Fig. 15. Gate Charge 300V 40A 10mA nanoCoulombs © 2004 IXYS All rights reserved 80A 20A 105 115 125 100 10000 1000 100 10 90 120 150 Fig . 16. M axim tan Puls e W idth - millis ec onds IXGR 50N60C2 IXGR 50N60C2D1 Fig. 14. Reverse-Bias Safe Operating Area º ...
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... K/W 0.1 Z thJC 0.01 0.001 0.0001 0.00001 0.0001 0.001 Fig. 24 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4000 T = 100° 300V nC R ...