IXGH24N60BU1 IXYS, IXGH24N60BU1 Datasheet
IXGH24N60BU1
Specifications of IXGH24N60BU1
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IXGH24N60BU1 Summary of contents
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... 250 GE(th 0.8 • V CES CE CES GES CE(sat) C C90 GE © 2003 IXYS All rights reserved IXGH 24N60BU1 Maximum Ratings 600 = 1 M 600 0.8 V CES 150 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. 6 Characteristic Values ( unless otherwise specified) J min. typ. max. 600 2.5 ...
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... V = 360 -di/dt = 100 thJC Min. Recommended Footprint (Dimensions in inches and (mm)) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max 1500 ...
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... 15V GE 40 13V 11V Volts CE Fig. 3. Saturation Voltage Characteristics 100 V = 10V 125° 25° Fig. 5. Admittance Curves © 2003 IXYS All rights reserved V = 13V GE 11V Fig. 6. Temperature Dependence of BV IXGH 24N60BU1 200 T = 25° 15V J GE 160 120 Volts CE Fig ...
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... D=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 D=0.01 Single pulse 0.01 0.001 0.00001 0.0001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2.5 2.0 1.5 (ON) 1.0 0.5 0 OFF ...
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... T = 100° 350V R 30 typ 60A 30A 15A 200 di /dt - A/µs F Fig.16 Peak Reverse Recovery Current © 2003 IXYS All rights reserved = 25°C 2.0 2.5 120 160 0 30A F max. 0.6 0.4 0.2 0.0 400 600 IXGH 24N60BU1 125° 37A F 20 ...
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... Fig.18 Diode Transient Thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 0.01 Pulse Width - Seconds 4,835,592 4,881,106 5,017,508 4,850,072 ...