IXDH20N120 IXYS, IXDH20N120 Datasheet - Page 4

• Manufacturer Part Number: IXDH20N120
• Description: IGBT NPT 1200V TO-247AD
• Manufacturer: IXYS

Specifications of IXDH20N120

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 20A
• Current - Collector (ic) (max): 38A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 38
• Ic90, Tc=90°c, Igbt, (a): 25
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.0
• Tfi, Typ, Igbt, (ns): 70
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.4
• Rthjc, Max, Igbt, (°c/w): 0.63
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4 - 4
E
E
I
CM
on
on
mJ
40
35
30
25
20
15
10
12
mJ
A
7
6
5
4
3
2
1
0
8
4
0
5
0
0
0
0
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
V
V
I
T
C
J
CE
GE
= 125°C
= 20A
= 600V
200
= ±15V
50
E
t
t
d(on)
r
on
times versus collector current
times versus gate resistor
RBSOA
10
100
400
R
T
V
J
CEK
G
150
600
= 125°C
= 82Ω
< V
20
CES
200
800 1000 1200
R
I
G
250
C
30
V
V
R
T
V
J
CE
GE
G
300
CE
= 125°C
= 82Ω
= 600V
= ±15V
A
t
Ω
d(on)
E
V
t
r
350
on
40
140
120
100
80
60
40
20
0
240
160
80
0
ns
ns
t
t
E
Z
0.0001
thJC
off
0.001
E
0.01
K/W
off
0.1
0.00001 0.0001
mJ
mJ
10
5
4
3
2
1
0
4
3
2
1
0
1
0
0
Fig. 8 Typ. turn off energy and switching
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
V
V
I
T
C
J
CE
GE
= 125°C
= 20A
= 600V
= ±15V
50
times versus collector current
times versus gate resistor
single pulse
10
diode
100
0.001
150
© 2004 IXYS All rights reserved
20
IXDH 20N120
IXDH 20N120 D1
200
IGBT
0.01
R
G
250
I
C
t
30
V
V
R
T
E
0.1
CE
GE
J
G
off
IXDH20N120D1
300
= 125°C
= 600V
= 82Ω
= ±15V
A
t
E
t
t
d(off)
d(off)
f
Ω
s
off
t
f
350
40
1
500
400
300
200
100
0
ns
1600
1200
800
400
0
ns
t
t