IRG4PC50WPBF International Rectifier, IRG4PC50WPBF Datasheet

IGBT WARP 600V 55A TO247AC

IRG4PC50WPBF

Manufacturer Part Number
IRG4PC50WPBF
Description
IGBT WARP 600V 55A TO247AC
Manufacturer
International Rectifier
Type
Warpr

Specifications of IRG4PC50WPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.3V @ 15V, 27A
Current - Collector (ic) (max)
55A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Capacitance, Gate
3700 pF
Current, Collector
55 A
Energy Rating
170 mJ
Package Type
TO-247AC
Polarity
N-Channel
Power Dissipation
200 W
Resistance, Thermal, Junction To Case
0.64 °C/W
Speed, Switching
150 kHz (Hard Switching), >300 kHz (Resonant Mode)
Transistor Type
NPN
Voltage, Collector To Emitter Shorted
600 V
Voltage, Collector To Emitter, Saturation
2.25 V
Dc Collector Current
55A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
200W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Other names
*IRG4PC50WPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PC50WPBF
Manufacturer:
FUJI
Quantity:
6 000
Part Number:
IRG4PC50WPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRG4PC50WPBF
Quantity:
2 377
Company:
Part Number:
IRG4PC50WPBF
Quantity:
5 000
PD - 94858
IRG4PC50WPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
=
G
E
GE
C
n-channel
TO-247AC

ƒ
θ
θ
θ
www.irf.com
1

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IRG4PC50WPBF Summary of contents

Page 1

... INSULATED GATE BIPOLAR TRANSISTOR Features θ θ θ www.irf.com IRG4PC50WPbF n-channel  ‚ ƒ 94858 = GE C TO-247AC 1 ...

Page 2

J ∆ ∆  ‚ ƒ „ … J „ Ω … = Ω Ω ≤ ≤ www.irf.com ...

Page 3

Square wave: 60% of rated voltage 40 20 Ideal diodes 0 0.1 1 1000 100 T = 150 C ° ° 15V GE 20µs PULSE WIDTH 1 1 ...

Page 4

T , Case Temperature ( 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 4 3 15V GE ...

Page 5

1MHz ies res oes ce gc 6000 C ies 4000 C oes 2000 C res 0 ...

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R = Ohm 150 C ° 480V 15V GE 2.0 1.0 0 Collector-to-emitter Current ( 1000 V = 20V GE ...

Page 7

L 50V 1000V * Driver same type as D.U.T 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Driver* 50V 1000V Ã 10% V ...

Page 8

B - 20.30 (.800) 19.70 (.775 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079 0.25 (.010) M 5.45 (.215) 3.40 (.133) 2X 3.00 (.118) EXAMPLE: T HIS IS AN IRFPE30 ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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