IXGR72N60A3H1 IXYS, IXGR72N60A3H1 Datasheet

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IXGR72N60A3H1

Manufacturer Part Number
IXGR72N60A3H1
Description
IGBT 600V 75A W/DIO ISOPLUS247
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGR72N60A3H1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.35V @ 15V, 60A
Current - Collector (ic) (max)
75A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
72
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.35
Tfi, Typ, Tj=25°c, Igbt, (ns)
250
Eoff, Typ, Tj=125°c, Igbt, (mj)
6.5
Rthjc, Max, Igbt, (°c/w)
0.62
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
0.8
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
GenX3
w/Diode
(Electrically Isolated Back Surface)
Ultra-Low Vsat PT IGBT for up to
5kHz Switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
V
F
T
T
Weight
Symbol
(T
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C110
F110
CM
CES
GES
J
JM
stg
C
L
SOLD
CES
CGR
GES
GEM
C
ISOL
GE(th)
CE(sat)
J
= 25°C, Unless Otherwise Specified)
TM
T
T
Continuous
Transient
T
T
T
T
V
Clamped Inductive Load
T
50/60 Hz, RMS, t = 1minute
I
Mounting Force
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
Test Conditions
Test Conditions
I
V
V
I
ISOL
C
C
J
J
C
C
C
C
C
GE
CE
CE
600V IGBT
= 60A, V
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C (Limited by Leads)
= 110°C
= 110°C
= 25°C, 1ms
= 15V, T
= 25°C
< 1mA
= 250μA, V
= V
= 0V, V
CES
, V
GE
GE
VJ
GE
= ±20V
= 125°C, R
= 15V, Note 1
CE
t = 20 seconds
= 0V
= V
GE
GE
= 1MΩ
G
= 3Ω
Advance Technical Information
T
J
= 125°C
IXGR72N60A3H1
Min.
20..120/4.5..27
3.0
Characteristic Values
-55 ... +150
-55 ... +150
V
Maximum Ratings
I
CM
CE
= 150
≤ 600
2500
3000
Typ.
260
±20
±30
400
200
150
300
600
600
75
52
32
5
±100
Max.
1.35
300
5.0
5
N/lb
mA
V~
V~
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
A
V
V
V
g
V
I
V
t
ISOPLUS 247
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V Electrical Isolation
Optimized for Low Conduction Losses
Square RBSOA
Anti-Parallel Ultra Fast Diode
International Standard Package
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
CES
CE(sat)
G
C
E
TM
C = Collector
≤ ≤ ≤ ≤ ≤
= 600V
= 52A
= 250ns
£
1.35V
ISOLATED TAB
DS100143(04/09)

Related parts for IXGR72N60A3H1

IXGR72N60A3H1 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 60A 15V, Note 1 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXGR72N60A3H1 Maximum Ratings 600 = 1MΩ 600 GE ±20 ± 400 = 3Ω 150 G CM ≤ 600 V CE 200 -55 ... +150 150 -55 ... +150 2500 3000 20..120/4.5..27 ...

Page 2

... Characteristic Values Min. Typ. 1 150°C 1 100°C 8 300V 100°C 140 R J 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGR72N60A3H1 ISOPLUS247 (IXGR) Outline Max 0.62 °C/W °C/W Max. 2 0.8 °C/W ...

Page 3

... T = 25ºC J 160 140 120 100 IXGR72N60A3H1 Fig. 2. Extended Output Characteristics @ 25º 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V GE -50 - Degrees Centigrade J Fig ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions 40ºC J 25ºC 125ºC 120 140 160 180 200 160 140 C ies 120 100 C oes C res Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGR72N60A3H1 Fig. 8. Gate Charge 300V 60A ...

Page 5

... C 360 105 115 125 400 610 380 570 360 530 340 490 320 450 300 410 280 370 260 330 240 290 220 250 100 IXGR72N60A3H1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off 3Ω 15V 480V 125º Amperes C Fig ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 90 120 110 80 100 25A d(on) Ω 15V 480V 25A 105 115 125 IXGR72N60A3H1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 3Ω 15V 480V Amperes 25º 125º 100 IXYS REF: G_72N60A3(76)04-23-09-C ...

Page 7

... Fig. 26 Maximum Transient Thermal Impedance Junction to Case (for Diode) © 2009 IXYS CORPORATION, All Rights Reserved Fig. 22 Typ. Reverse Recovery F Charge Q rr Fig. 25 Typ Recovery Time t 0.01 0.1 Pulse Width [s] IXGR72N60A3H1 Fig. 23 Typ. Peak Reverse Current 100 IXYS REF: G_72N60A3(76)04-23-09-C ...

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