IXSH45N120B IXYS, IXSH45N120B Datasheet

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IXSH45N120B

Manufacturer Part Number
IXSH45N120B
Description
IGBT 1200V 75A SCSOA TO-247
Manufacturer
IXYS
Datasheet

Specifications of IXSH45N120B

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 45A
Current - Collector (ic) (max)
75A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
45
Vce(sat), Max, Tj=25°c, Igbt, (v)
3
Tfi, Typ, Igbt, (ns)
380
Eoff, Typ, Tj=125°c, Igbt, (mj)
13
Rthjc, Max, Igbt, (k/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXSH45N120B
Manufacturer:
IXYS
Quantity:
18 000
© 2000 IXYS All rights reserved
High Voltage IGBT
"S" Series - Improved SCSOA Capability
Preliminary data
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
P
T
T
T
M
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
Symbol
BV
V
I
I
V
IXYS reserves the right to change limits, test conditions, and dimensions.
C25
C90
CM
CES
GES
SC
J
JM
stg
CGR
C
CES
GES
GEM
GE(th)
CE(sat)
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
T
Mounting torque
Test Conditions
I
I
V
Note 1
V
I
Note 2
C
C
C
C
C
C
C
J
J
J
GE
CE
CE
= 125°C, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C (limited by leads)
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 1.0 mA, V
= 250 mA, V
= 0.8 • V
= 0 V, V
= I
C90,
V
GE
GE
J
CES
GE
= 125°C, R
= 15 V
= ±20 V
= 720 V; V
GE
CE
= 0 V
= V
GE
GE
G
= 1 MW
= 5 W
GE
(TO-247)
TO-247
T
T
= 15 V, R
J
J
(T
= 125°C
= 125°C
J
= 25°C, unless otherwise specified)
G
= 5 W
IXSH 45N120B
IXST 45N120B
1200
min.
Characteristic Values
3
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
typ.
1.13/10 Nm/lb.in.
2.5
2.6
CM
1200
1200
= 90
±20
±30
180
300
150
300
CES
10
75
45
max.
6
±100
2.5
3.0
50
6
mA
mA
nA
°C
°C
°C
°C
ms
W
V
V
V
V
V
V
A
A
A
A
V
V
g
I
V
V
Features
• Epitaxial Silicon drift region
• MOS gate turn-on for drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
• Welding
TO-247 AD (IXSH)
G = Gate
S = Emitter
TO-268 ( IXST)
C25
- fast switching
- small tail current
power supplies
CES
CE(sat)
G
C
=
= 1200 V
=
G
E
E
TAB = Collector
3.0 V
75 A
C = Collector
98713A (7/00)
(TAB)
(TAB)
1 - 2

Related parts for IXSH45N120B

IXSH45N120B Summary of contents

Page 1

... 0.8 • V CES CE CES Note 1 = ± GES CE(sat) C C90, GE Note 2 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXSH 45N120B IXST 45N120B Maximum Ratings 1200 = 1 MW 1200 GE ±20 ± 180 = 0.8 V CES = 300 -55 ...

Page 2

... CES 440 700 22 0.25 (Clamp) > 0.8 • higher T CE CES Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXSH 45N120B IXST 45N120B TO-247 AD (IXSH) Outline ...

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