IXGH24N170 IXYS, IXGH24N170 Datasheet
IXGH24N170
Manufacturer Part Number
IXGH24N170
Description
IGBT 1700V 50V TO-247AD
Manufacturer
IXYS
Datasheet
1.IXGT24N170.pdf
(2 pages)
Specifications of IXGH24N170
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
3.3V @ 15V, 24A
Current - Collector (ic) (max)
50A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.7kV
Collector Current (dc) (max)
50A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
1700
Ic25, Tc=25°c, Igbt, (a)
50
Ic90, Tc=90°c, Igbt, (a)
24
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.3
Tfi, Typ, Igbt, (ns)
250
Eoff, Typ, Tj=125°c, Igbt, (mj)
12
Rthjc, Max, Igbt, (°c/w)
0.50
If, Tc=90°c, Diode, (a)
-
Rthjc, Max, Diode, (k/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXGH24N170
Manufacturer:
IXYS
Quantity:
18 000
Company:
Part Number:
IXGH24N170A
Manufacturer:
IXYS
Quantity:
18 000
Company:
Part Number:
IXGH24N170AH1
Manufacturer:
IXYS
Quantity:
15 500
High Voltage
IGBT
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
T
T
M
Weight
Symbol Test Conditions
(T
BV
V
I
I
V
© 2008 IXYS CORPORATION, All rights reserved
C25
C90
CM
CES
GES
SC
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C unless otherwise specified)
Test Conditions
I
I
V
V
V
I
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
V
R
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)
TO-247
TO-268
C
C
C
C
J
C
C
C
C
CE
GE
CE
GE
GE
G
= 250μA, V
= I
= 250μA, V
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C
= 25°C, 1ms
= 5
= 0V, V
= 25°C
= 90°C
= 0.8 • V
= 0V
= 15V, T
= 15V, T
C90
Ω,
, V
non repetitive
GE
GE
= 15V, Note 1
CES
VJ
VJ
GE
CE
= ± 20V
= 125°C, R
= 125°C, V
= 0V
= V
GE
GE
= 1M
CE
G
T
T
= 5
J
J
= 1000V
= 125°C
= 125°C
Ω
Ω
Advance Technical Information
IXGH24N170
IXGT24N170
@ 0.8 • V
1700
-55 ... +150
-55 ... +150
Min.
3.0
Characteristic Values
I
1.13/10
CM
Maximum Ratings
1700
1700
± 20
± 30
= 50
150
250
150
300
260
50
24
10
CES
Typ.
6
4
2.5
3.0
±100
Max.
500
Nm/lb.in.
5.0
3.3
50
μA
nA
μA
μs
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
A
A
A
A
g
g
G = Gate
E = Emitter
V
I
V
t
TO-247 (IXGH)
TO-268 (IXGT)
Features
Applications
Advantages
C25
fi(typ)
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
High current handling capability
MOS Gate turn-on
- drive simplicity
Rugged NPT structure
Molding epoxies meet UL 94 V-0
flammability classification
Capacitor discharge & pulser circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
CES
CE(sat)
G
C
G
≤ ≤ ≤ ≤ ≤ 3.3V
= 1700V
= 50A
= 250ns
E
E
C
TAB = Collector
= Collector
DS98994A(09/08)
C (TAB)
C (TAB)
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IXGH24N170 Summary of contents
Page 1
... V = 0.8 • V CES CE CES 0V ± 20V GES 15V, Note 1 CE(sat) C C90 GE © 2008 IXYS CORPORATION, All rights reserved Advance Technical Information IXGH24N170 IXGT24N170 Maximum Ratings 1700 Ω 1700 ± 20 ± 150 Ω 0.8 • V CES = 1000V 10 CE 250 -55 ... +150 150 -55 ... +150 ...
Page 2
... R 4. TO-268 Outline °C/W 0.50 °C/W Terminals Gate 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXGH24N170 IXGT24N170 Drain Inches Max. Min. Max. 5.3 .185 .209 2.54 .087 .102 2.6 .059 .098 1.4 .040 .055 2.13 ...