IXGK50N60BU1 IXYS, IXGK50N60BU1 Datasheet

IXGK50N60BU1

Manufacturer Part Number

IXGK50N60BU1

Description

IGBT 75A 600V TO-264AA

Manufacturer

IXYS

Series

HiPerFAST™r

Datasheet

1.IXGK50N60BU1.pdf (6 pages)

Specifications of IXGK50N60BU1

Voltage - Collector Emitter Breakdown (max)

600V

Vce(on) (max) @ Vge, Ic

2.5V @ 15V, 50A

Current - Collector (ic) (max)

75A

Power - Max

300W

Input Type

Standard

Mounting Type

Through Hole

Package / Case

TO-264AA

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Igbt Type

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXGK50N60BU1

Manufacturer:

IXYS

Quantity:

18 000

Current page: 1 of 6
Download datasheet (163Kb)

Symbol

SSOA

(RBSOA)

Weight

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

Symbol

HiPerFAST

IGBT with Diode

Combi Pack

Preliminary data

IXYS reserves the right to change limits, test conditions, and dimensions.

C25

C90

CES

GES

stg

CES

CGR

GEM

GE(th)

CE(sat)

GES

CES

Test Conditions

Continuous

Transient

Clamped inductive load, L = 30 mH

Mounting torque (M4)

Test Conditions

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C

= 90°C

= 25°C, 1 ms

= 15 V, T

= 25°C

= 500 mA, V

= 0.8 • V

= 0 V

= 0 V, V

= I

C90

, V

CES

= 15 V

= ±20 V

= 125°C, R

= 0 V

= V

= 1 MW

= 10 W

50N50

50N60

50N50BU1

50N60BU1

= 125°C

= 25°C

IXGK 50N50BU1

IXGK 50N60BU1

= 25°C, unless otherwise specified)

50N50

min.

500

600

500

2.5

200

300

±20

±30

Characteristic Values

Maximum Ratings

-55 ... +150

@ 0.8 V

0.9/6

150

typ.

300

= 100

CES

600

±20

±30

max.

200

300

±100

50N60

250

5.5

2.3

2.5

Nm/lb.in.

°C

500 V 75 A

600 V 75 A

CES

G = Gate,

E = Emitter,

Features

Applications

Advantages

TO-264 AA

International standard package

JEDEC TO-264 AA

High frequency IGBT and anti-

parallel FRED in one package

2nd generation HDMOS

Low V

- for minimum on-state conduction

MOS Gate turn-on

- drive simplicity

Fast Recovery Epitaxial Diode (FRED)

- soft recovery with low I

Space savings (two devices in one

package)

High power density

AC motor speed control

DC servo and robot drives

DC choppers

Uninterruptible power supplies (UPS)

Switch-mode and resonant-mode

power supplies

Easy to mount with 1 screw

(isolated mounting screw hole)

Reduces assembly time and cost

losses

C25

CE(sat)

C = Collector,

TAB = Collector

2.3 V 100ns

2.5 V 120ns

CE(sat)

process

97510A(1/98)

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Related parts for IXGK50N60BU1

IXGK50N60BU1 Summary of contents

Page 1

... V CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXGK 50N50BU1 IXGK 50N60BU1 Maximum Ratings 50N50 500 600 = 1 MW 500 600 GE ±20 ±20 ±30 ± 200 = 100 ...

Page 2

... J min. typ. /dt = 480 A/ 125°C 175 25° IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXGK50N60BU1 TO-264 AA Outline max Dim. Millimeter ns Min. Max. A 4.82 5. 2.54 2.89 A2 2.00 2 ...

Page 3

... Volts GE Figure 5. Admittance Curves © 2000 IXYS All rights reserved IXGK50N50BU1 V = 15V GE 13V 11V Figure 2. Extended Output Characteristics Volts Figure 4. Temperature Dependence 25° Figure 6. Capacitance Curves IXGK50N60BU1 200 T = 25°C J 11V V = 15V GE 13V 160 120 Volts CE 1 15V GE 1.4 1 50A C 1.0 ...

Page 4

... Figure 11. IGBT Transient Thermal Resistance © 2000 IXYS All rights reserved IXGK50N50BU1 (ON (OFF 100 Figure 8. Dependence of E OFF C 600 100 10 0.1 200 250 300 Figure 10. Turn-off Safe Operating Area D = Duty Cycle 0.001 Pulse Width - Seconds IXGK50N60BU1 125° (ON 100A 50A (ON =25A (OFF (ON ...

Page 5

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