IXGK50N60BU1 IXYS, IXGK50N60BU1 Datasheet

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IXGK50N60BU1

Manufacturer Part Number
IXGK50N60BU1
Description
IGBT 75A 600V TO-264AA
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet

Specifications of IXGK50N60BU1

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 50A
Current - Collector (ic) (max)
75A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-264AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGK50N60BU1
Manufacturer:
IXYS
Quantity:
18 000
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
BV
V
I
I
V
© 2000 IXYS All rights reserved
HiPerFAST
IGBT with Diode
Combi Pack
Preliminary data
IXYS reserves the right to change limits, test conditions, and dimensions.
C25
C90
CM
CES
GES
J
JM
stg
CES
CGR
GEM
C
GE(th)
CE(sat)
GES
d
CES
T
T
Test Conditions
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 30 mH
T
Mounting torque (M4)
Test Conditions
I
I
V
V
V
I
C
C
C
J
J
C
C
C
C
GE
CE
GE
CE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 500 mA, V
= 500 mA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
, V
TM
GE
GE
VJ
CES
= 15 V
= ±20 V
= 125°C, R
GE
CE
= 0 V
= V
GE
GE
= 1 MW
G
= 10 W
50N50
50N60
T
T
50N50BU1
50N60BU1
J
J
(T
= 125°C
= 25°C
IXGK 50N50BU1
IXGK 50N60BU1
J
= 25°C, unless otherwise specified)
50N50
min.
500
600
500
500
2.5
200
300
±20
±30
Characteristic Values
Maximum Ratings
75
50
-55 ... +150
-55 ... +150
@ 0.8 V
I
CM
0.9/6
150
typ.
300
10
= 100
CES
600
600
±20
±30
max.
200
300
±100
75
50
50N60
250
5.5
2.3
2.5
Nm/lb.in.
15
mA
mA
nA
°C
°C
°C
°C
W
500 V 75 A
600 V 75 A
V
V
V
V
A
A
A
A
V
V
V
V
V
g
V
CES
G = Gate,
E = Emitter,
Features
Applications
Advantages
TO-264 AA
International standard package
JEDEC TO-264 AA
High frequency IGBT and anti-
parallel FRED in one package
2nd generation HDMOS
Low V
- for minimum on-state conduction
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
Space savings (two devices in one
package)
High power density
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
losses
I
C25
CE(sat)
G
C
E
C = Collector,
TAB = Collector
V
2.3 V 100ns
2.5 V 120ns
CE(sat)
TM
RM
process
97510A(1/98)
t
1 - 6
fi

Related parts for IXGK50N60BU1

IXGK50N60BU1 Summary of contents

Page 1

... V CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXGK 50N50BU1 IXGK 50N60BU1 Maximum Ratings 50N50 500 600 = 1 MW 500 600 GE ±20 ±20 ±30 ± 200 = 100 ...

Page 2

... J min. typ. /dt = 480 A/ 125°C 175 25° IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXGK50N60BU1 TO-264 AA Outline max Dim. Millimeter ns Min. Max. A 4.82 5. 2.54 2.89 A2 2.00 2 ...

Page 3

... Volts GE Figure 5. Admittance Curves © 2000 IXYS All rights reserved IXGK50N50BU1 V = 15V GE 13V 11V Figure 2. Extended Output Characteristics Volts Figure 4. Temperature Dependence 25° Figure 6. Capacitance Curves IXGK50N60BU1 200 T = 25°C J 11V V = 15V GE 13V 160 120 Volts CE 1 15V GE 1.4 1 50A C 1.0 ...

Page 4

... Figure 11. IGBT Transient Thermal Resistance © 2000 IXYS All rights reserved IXGK50N50BU1 (ON (OFF 100 Figure 8. Dependence of E OFF C 600 100 10 0.1 200 250 300 Figure 10. Turn-off Safe Operating Area D = Duty Cycle 0.001 Pulse Width - Seconds IXGK50N60BU1 125° (ON 100A 50A (ON =25A (OFF (ON ...

Page 5

... IXYS All rights reserved IXGK50N50BU1 IXGK50N60BU1 ...

Page 6

... IXYS All rights reserved IXGK50N50BU1 IXGK50N60BU1 ...

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