IXDT30N120 IXYS, IXDT30N120 Datasheet

IXDT30N120

Manufacturer Part Number

IXDT30N120

Description

IGBT 1200V 60A W/DIODE TO-268AA

Manufacturer

IXYS

Datasheet

1.IXDH30N120.pdf (4 pages)

Specifications of IXDT30N120

Igbt Type

NPT

Voltage - Collector Emitter Breakdown (max)

1200V

Vce(on) (max) @ Vge, Ic

2.9V @ 15V, 30A

Current - Collector (ic) (max)

60A

Power - Max

300W

Input Type

Standard

Mounting Type

Surface Mount

Package / Case

TO-268

Vces, (v)

1200

Ic25, Tc=25°c, Igbt, (a)

Ic90, Tc=90°c, Igbt, (a)

Vce(sat), Max, Tj=25°c, Igbt, (v)

2.4

Tfi, Typ, Igbt, (ns)

Eoff, Typ, Tj=125°c, Igbt, (mj)

3.4

Rthjc, Max, Igbt, (°c/w)

0.42

If, Tc=90°c, Diode, (a)

Rthjc, Max, Diode, (k/w)

Package Style

TO-268

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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High Voltage IGBT

with optional Diode

Short Circuit SOA Capability

Square RBSOA

Symbol

RBSOA

(SCSOA)

Weight

Symbol

IXYS reserves the right to change limits, test conditions and dimensions.

C25

C90

CES

GES

stg

CES

CGR

GES

GEM

(BR)CES

GE(th)

CE(sat)

Conditions

Continuous

Transient

Clamped inductive load; L = 30 µH

Mounting torque

Conditions

= 1 mA; V

= 30 A; V

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C

= 90°C

= 90°C; t

= 25°C;

= 47 Ω, non repetitive

= ±15 V; T

= ±15 V; V

= 0 V

= V

= 0 V; V

CES

;

= 1 ms

= 15 V

IGBT

Diode

= V

= ± 20 V

= 125°C; R

= 25°C

= 125°C

= V

CES

; T

= 20 kΩ

= 125°C

= 47 Ω

= 25°C, unless otherwise specified)

IXDH 30N120

1200

min.

4.5

Characteristic Values

-55 ... +150

-40 ... +150

Maximum Ratings

CEK

typ.

2.5

2.4

1.1/10 Nm/lb.in.

< V

1200

IXDH 30N120 D1

= 50

±20

±30

300

135

CES

max.

± 500

6.5

1.5 mA

2.9

°C

µs

TO-247 AD (IXDH)

G = Gate,

C = Collector ,

Features

• NPT IGBT technology

• low saturation voltage

• low switching losses

• square RBSOA, no latch up

• high short circuit capability

• positive temperature coefficient for

• MOS input, voltage controlled

• optional ultra fast diode

• International standard packages

Advantages

• Space savings

• High power density

• IXDT:

Typical Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninteruptible power supplies (UPS)

• Switch-mode and resonant-mode

C25

easy paralleling

surface mountable high power package

power supplies

CES

CE(sat) typ

IXDH 30N120

IXDH 30N120 D1

= 1200 V

= 60 A

= 2.4 V

E = Emitter

TAB = Collector

C (TAB)

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Related parts for IXDT30N120

IXDT30N120 Summary of contents

Page 1

... 25°C CES CE CES 125° ± GES CE(sat IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved IXDH 30N120 IXDH 30N120 D1 Maximum Ratings 1200 = 20 kΩ 1200 GE ±20 ± Ω < V CEK CES ; T = 125°C ...

Page 2

... A/µ 125° -di /dt = 100 A/µ thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 1650 250 110 = 0.5 V 120 CE CES 100 70 500 70 4 ...

Page 3

... Fig. 3 Typ. transfer characteristics 600V 25A 100 120 140 Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved V =17V GE 15V I C 13V 11V 9V 2.5 3 IXDH 30N120 IXDH 30N120 125° ...

Page 4

... J V < V CEK CES 200 400 600 800 1000 1200 Fig. 11 Reverse biased safe operating area RBSOA IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 140 120 ns E 100 off 600V ±15V ...

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