IXGX120N60B IXYS, IXGX120N60B Datasheet
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Manufacturer Part Number
IXGX120N60B
Description
IGBT W/DIODE 600V 200A TO-247
Specifications of IXGX120N60B
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 120A
Current - Collector (ic) (max)
200A
Power - Max
660W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Package Type
PLUS 247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
200
Ic90, Tc=90°c, Igbt, (a)
120
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.1
Tfi, Typ, Tj=25°c, Igbt, (ns)
160
Eoff, Typ, Tj=125°c, Igbt, (mj)
8.7
Rthjc, Max, Igbt, (°c/w)
0.19
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
PLUS247
Lead Free Status / Rohs Status
Compliant
Available stocks
Part Number:
IXGX120N60B 3
HiPerFAST
Symbol
BV
V
I
I
V
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
M
Weight
© 2004 IXYS All rights reserved
CM
C25
C90
L(RMS)
CES
GES
J
JM
stg
L
CGR
GEM
C
GE(th)
CE(sat)
CES
CES
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
External lead limit
T
V
Clamped inductive load
T
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
Test Conditions
I
I
V
V
V
I
C
C
C
C
C
C
C
GE
J
J
GE
CE
CE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 1 mA, V
= 1 mA, V
= V
= 0 V
= 0 V, V
= I
C90
CES
, V
GE
TM
GE
VJ
GE
CE
= 15 V
= ±20 V
= 125°C, R
= V
= 0 V
IGBT
GE
TO-264
PLUS 247
TO-264
GS
= 1 MΩ
G
= 2.4 Ω
T
T
(T
J
J
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
IXGK 120N60B
IXGX 120N60B
min.
600
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
0.4/6
Maximum Ratings
I
CM
typ.
= 200
600
600
±20
±30
200
120
300
660
150
300
76
CES
max.
Nm/lb.in.
±400 nA
200 µA
5.5
2.1 V
10
6
2 mA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
A
V
V
g
g
PLUS 247
(IXGX)
TO-264 AA
Features
Applications
Advantages
G = Gate
C = Collector
(IXGK)
International standard packages
Very high current, fast switching IGBT
Low V
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
PLUS 247
mounting
Space savings
High power density
V
I
V
C25
CES
CE(sat)
CE(sat)
G
TM
C
G
TM
E
package for clip or spring
C
= 600 V
= 200 A
=
E
E = Emitter
TAB = Collector
2.1 V
DS98602B(08/04)
(TAB)
(TAB)
Related parts for IXGX120N60B
IXGX120N60B Summary of contents
... GE(th CES CE CES ±20 V GES CE(sat) C C90 GE © 2004 IXYS All rights reserved IXGK 120N60B IXGX 120N60B Maximum Ratings 600 = 1 MΩ 600 GS ±20 ±30 200 120 76 300 = 2.4 Ω 200 0.8 V CES 660 -55 ... +150 150 -55 ... +150 300 0.4/6 Characteristic Values (T = 25° ...
... CE E higher T or increased R off J R thJC R thCK IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J min. ...
... Fig. 5. Collector-to-Em itter Voltage vs . Gate-to-Em itter voltage 3.6 3.4 3 150A C 100A 2.8 50A 2.6 2.4 2.2 2 1.8 1 Volts G E © 2004 IXYS All rights reserved º C 300 = 15V 13V 250 11V 9V 200 150 7V 100 50 5V 1.6 1.8 2 2.2 2.4 º C 1.2 = 15V 1.2 13V 1 ...
... C fi 100A T = 125ºC J 500 V = 15V 480V CE 400 300 I = 100A C 50A 200 100 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. 100 120 140 160 180 C º C º 100 G 350 300 250 200 150 100 ...
... V 200 150 I = 100A C 50A 100 Degrees Centigrade J Fig. 15. Capacitance 100000 MHz 10000 1000 C 100 Volts 0.1 0.01 1 © 2004 IXYS All rights reserved 2.7Ω 15V 480V 105 115 125 220 200 180 C ies 160 140 120 100 C oes res Fig. 17. Maxim um Transient Therm al Resistance ...
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