IRGPC40U International Rectifier, IRGPC40U Datasheet

IGBT UFAST 600V 40A TO-247AC

IRGPC40U

Manufacturer Part Number
IRGPC40U
Description
IGBT UFAST 600V 40A TO-247AC
Manufacturer
International Rectifier
Datasheet

Specifications of IRGPC40U

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRGPC40U
Manufacturer:
IR
Quantity:
5 000
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IRGPC40U
Manufacturer:
TI/NSC
Quantity:
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Part Number:
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INSULATED GATE BIPOLAR TRANSISTOR
Features
Thermal Resistance
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz)
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
Absolute Maximum Ratings
V
I
I
I
I
V
E
P
P
T
T
R
R
R
Wt
C
C
CM
LM
See Fig. 1 for Current vs. Frequency curve
J
STG
CES
GE
ARV
D
D
@ T
@ T
JC
CS
JA
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
Parameter
C-681
G
n-channel
Min.
300 (0.063 in. (1.6mm) from case)
C
E
10 lbf•in (1.1N•m)
-55 to +150
Max.
6 (0.21)
IRGPC40U
600
160
160
±20
160
40
20
15
65
Typ.
0.24
@V
TO-247AC
V
V
GE
CE(sat)
UltraFast IGBT
CES
= 15V, I
PD - 9.684A
Max.
0.77
= 600V
40
3.0V
C
= 20A
Revision 0
Units
Units
g (oz)
°C/W
mJ
°C
W
V
A
V

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IRGPC40U Summary of contents

Page 1

... Storage Temperature Range STG Soldering Temperature, for 10 sec. Mounting torque, 6- screw. Thermal Resistance Parameter R Junction-to-Case JC R Case-to-Sink, flat, greased surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight IRGPC40U n-channel Max. 600 40 20 160 160 ±20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf• ...

Page 2

... IRGPC40U Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage (BR)ECS Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES I Gate-to-Emitter Leakage Current ...

Page 3

... Fig Typical Output Characteristics uty c y cle: 50 125° 90° C sink G ate driv e as spe c ified tio fundamental; for triangular wave, I=I RMS 1000 100 ° 5° 0 Fig Typical Transfer Characteristics C-683 IRGPC40U T ria lta 100 ) µ IDTH ate -to-E m itter V olta ...

Page 4

... IRGPC40U 100 T , Case Temperature (°C) C Fig Maximum Collector Current vs. Case Temperature 0.2 0 0.1 0 .05 SIN ( 0.0 2 0.0 1 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 3 15V 0µ 3.0 2.5 2.0 A 1.5 125 150 -60 -40 - ture (°C ) Fig Collector-to-Emitter Voltage vs. ...

Page 5

... Collector-to-Emitter Voltage 1 ° 1.8 C 1.7 1.6 1.5 1 Fig Typical Switching Losses vs. Gate Resistance SHORTED Fig Typical Gate Charge vs 0 -60 -40 W Fig Typical Switching Losses vs. C-685 IRGPC40U = Total G ate C harge ( Gate-to-Emitter Voltage = - 100 120 140 160 ase Tem perature (° Case Temperature 6 0 ...

Page 6

... IRGPC40U 6 150 ° 5 4.0 3.0 2.0 1.0 0 llector- itte r Current ( Fig Typical Switching Losses vs. Collector-to-Emitter Current Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig ...

Page 7

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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