IRG4BC40U International Rectifier, IRG4BC40U Datasheet

IGBT UFAST 600V 40A TO-220AB

IRG4BC40U

Manufacturer Part Number
IRG4BC40U
Description
IGBT UFAST 600V 40A TO-220AB
Manufacturer
International Rectifier
Datasheet
1.IRG4BC40U.pdf (9 pages)

Specifications of IRG4BC40U

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Other names
*IRG4BC40U

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRG4BC40U
Manufacturer:
IR
Quantity:
12 500
Company:
H&T Electronics H&T Electronics
Part Number:
IRG4BC40U
Quantity:
25 780
Company:
H&T Electronics H&T Electronics
Part Number:
IRG4BC40UPBF
Quantity:
2 400
Benefits
Features
Features
Thermal Resistance
Features
Features
Features
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
Absolute Maximum Ratings
• UltraFast: optimized for high operating
• Generation 4 IGBT design provides tighter
• Industry standard TO-220AB package
www.irf.com
V
I
I
I
I
V
E
P
P
T
T
R
R
R
Wt
C
C
CM
LM
Generation 3
kHz in resonant mode
parameter distribution and higher efficiency than
J
ARV
STG
CES
GE
D
D
θJC
θCS
θJA
industry-standard Generation 3 IR IGBTs
frequencies 8-40 kHz in hard switching, >200
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
Parameter
G
n-channel
------
------
------
------
Min.
300 (0.063 in. (1.6mm) from case)
E
C
10 lbf•in (1.1N•m)
-55 to +150
TO-220AB
Max.
2 (0.07)
600
160
160
±20
160
40
20
15
65
Typ.
------
------
0.50
V
@V
CE(on) typ.
V
GE
CES
= 15V, I
Max.
------
------
0.77
80
= 600V
= 1.72V
C
= 20A
4/17/2000
Units
g (oz)
Units
°C/W
mJ
°C
V
A
V
W
1

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IRG4BC40U Summary of contents

Page 1

Features Features Features Features Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard ...

Page 2

Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage ---- /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. ...

Page 3

wave : ...

Page 4

T , Case Temperature (°C) C Fig Maximum Collector Current vs. Case Temperature 0.2 ...

Page 5

...

Page 6

R = 10Ω 150° 480V 15V G E 3.0 2.0 1.0 0 Collector-to-Emitter Current (A) C Fig Typical ...

Page 7

L 50V Driver .T 80 Note the 50V pow er s upply, pulse w idth ...

Page 8

(. (. (. (. 6.47 (.255 ) 6.10 (.240 ) (.6 ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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