IRG4PC40FD International Rectifier, IRG4PC40FD Datasheet - Page 2

• Manufacturer Part Number: IRG4PC40FD
• Description: IGBT W/DIODE 600V 49A TO-247AC
• Manufacturer: International Rectifier

Specifications of IRG4PC40FD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.7V @ 15V, 27A
• Current - Collector (ic) (max): 49A
• Power - Max: 160W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Other names: *IRG4PC40FD

IRG4PC40FD
Electrical Characteristics @ T
Switching Characteristics @ T
V
V
V
g
I
V
I
Q
Qge
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
GES
CES
d(on)
d(off)
f
d(on)
d(off)
f
rr
r
r
rr
V
fe
E
2
on
off
ts
(BR)CES
CE(on)
GE(th)
oes
V
FM
g
ts
ies
res
gc
rr
(rec)M
(BR)CES
GE(th)
/dt
/ T
/ T
J
J
Gate - Emitter Charge (turn-on)
Collector-to-Emitter Breakdown VoltageS 600
Temperature Coeff. of Breakdown Voltage ----
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage ----
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
----
----
----
3.0
9.2
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
---- 2200 ----
----
----
----
----
----
----
----
----
----
----
----
0.70
1.50
1.85
1.56
0.95
2.01
2.96
100
230
170
350
310
140
220
188
160
---- 3500
---- ±100
-12
1.3
1.2
4.7
4.0
6.5
----
----
----
12
15
35
63
32
63
33
13
29
42
74
80
250
150
350
250
120
180
600
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
1.7
6.0
1.7
1.6
4.0
----
6.0
---- mV/°C V
23
53
60
10
V/°C
A/µs T
nA
µA
nC
mJ
mJ
nH
nC
V
V
ns
ns
pF
ns
V
S
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
T
I
V
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
CC
= 49A
= 27A, T
= 15A
= 15A, T
= 27A
= 27A
= 25°C
= 27A, V
= 27A, V
= 150°C,
= 25°C See Fig.
= 125°C
= 25°C See Fig.
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 0V, I
= 0V, I
= V
= V
= 100V, I
= 0V, V
= 0V, V
= 400V
= 15V
= 15V, R
= 15V, R
= ±20V
= 0V
= 30V
GE
GE
, I
, I
J
J
C
C
CC
CC
CE
CE
= 150°C
C
C
= 150°C
See Fig.
See Fig.
Conditions
Conditions
= 1.0mA
= 250µA
G
G
C
= 250µA
= 250µA
= 480V
See Fig. 9, 10, 11, 18
= 480V
= 600V
= 600V, T
= 10
= 10
= 27A
14
15
17
16
See Fig. 8
See Fig. 7
www.irf.com
See Fig. 2, 5
See Fig. 13
di/dt 200A/µs
V
V
J
I
GE
R
F
= 150°C
= 15A
= 200V
= 15V