IGBT WARP 600V 40A TO-220AB

IRG4BC40W

Manufacturer Part NumberIRG4BC40W
DescriptionIGBT WARP 600V 40A TO-220AB
ManufacturerInternational Rectifier
IRG4BC40W datasheet
 


Specifications of IRG4BC40W

Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.5V @ 15V, 20A
Current - Collector (ic) (max)40APower - Max160W
Input TypeStandardMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Igbt Type-Other names*IRG4BC40W
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INSULATED GATE BIPOLAR TRANSISTOR
Features
Features
Features
Features
Features
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
Parameter
V
Collector-to-Emitter Breakdown Voltage
CES
I
@ T
= 25°C
Continuous Collector Current
C
C
I
@ T
= 100°C
Continuous Collector Current
C
C
Pulsed Collector Current Q
I
CM
Clamped Inductive Load Current R
I
LM
V
Gate-to-Emitter Voltage
GE
Reverse Voltage Avalanche Energy S
E
ARV
P
@ T
= 25°C
Maximum Power Dissipation
D
C
P
@ T
= 100°C
Maximum Power Dissipation
D
C
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
R
Junction-to-Case
JC
R
Case-to-Sink, Flat, Greased Surface
CS
R
Junction-to-Ambient, typical socket mount
JA
Wt
Weight
www.irf.com
PD - 91654A
IRG4BC40W
C
V
CES
V
CE(on) typ.
G
@V
= 15V, I
E
GE
n-channel
TO-220AB
Max.
600
40
20
160
160
± 20
160
160
65
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Typ.
Max.
–––
0.77
0.5
–––
–––
80
2.0 (0.07)
–––
= 600V
2.05V
= 20A
C
Units
V
A
V
mJ
W
°C
Units
°C/W
g (oz)
1
4/24/2000

IRG4BC40W Summary of contents

  • Page 1

    ... Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torque, 6- screw. Thermal Resistance Parameter R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight www.irf.com PD - 91654A IRG4BC40W C V CES V CE(on) typ 15V n-channel TO-220AB Max. 600 40 20 160 160 ± ...

  • Page 2

    ... IRG4BC40W Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS Temperature Coeff. of Breakdown Voltage — (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES ...

  • Page 3

    ... Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com 5° ° rive ifie tio Frequency (kHz) (Load Current = I of fundamental) RMS 1000 100   T = 150 C ° 150 15V 1 4.0 5.0 5 Fig Typical Transfer Characteristics IRG4BC40W Tria ° ° 50V CC 5µs PULSE WIDTH Gate-to-Emitter Voltage ( ...

  • Page 4

    ... IRG4BC40W 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02  SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3 15V PULSE WIDTH 2.5 2.0 1.5 1.0 125 ...

  • Page 5

    ... Gate Resistance (Ohm) G Fig Typical Switching Losses vs. Gate Resistance www.irf.com  SHORTED 100 0 Fig Typical Gate Charge vs 0 -60 -40 -20 Fig Typical Switching Losses vs. IRG4BC40W = 400V = 20A Total Gate Charge (nC) G Gate-to-Emitter Voltage 10 = 10Ohm = 15V = 480V  100 120 140 160 ° Junction Temperature ( C ) ...

  • Page 6

    ... IRG4BC40W  2 10Ohm 150 C ° 480V 15V GE 1.5 1.0 0.5 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6  1000 V = 20V 125 C J 100  SAFE OPERATING AREA 100 , Collector-to-Emitter Voltage (V) Fig Turn-Off SOA www.irf.com 1000 ...

  • Page 7

    ... Load Test Circuit 50V 1000V www.irf.com 480V .T. D river ff t=5µ IRG4BC40W 480V 25° 480µF 960V Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 480V Fig. 14b - Switching Loss Waveforms 7 ...

  • Page 8

    ... IRG4BC40W Case Outline and Dimensions — TO-220AB (. 2 2 (.255 (.240 (. (. 1.15 (. 4.06 (.160 (. 3.55 (.140) 0.93 (.037 0.69 (.027 (. (. (. (. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel (0)20 8645 8000 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel (0) 6172 96590 IR JAPAN: K& ...

  • Page 9

    Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...