IRG4PC30KD International Rectifier, IRG4PC30KD Datasheet

IGBT W/DIODE 600V 28A TO-247AC

IRG4PC30KD

Manufacturer Part Number
IRG4PC30KD
Description
IGBT W/DIODE 600V 28A TO-247AC
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4PC30KD

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 16A
Current - Collector (ic) (max)
28A
Power - Max
100W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AC
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / Rohs Status
Not Compliant
Other names
*IRG4PC30KD

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PC30KD
Manufacturer:
IR
Quantity:
825
Part Number:
IRG4PC30KD
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRG4PC30KD
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRG4PC30KDPBF
Manufacturer:
ON
Quantity:
3 000
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
• High short circuit rating optimized for motor control,
• Combines low conduction losses with high
• Tighter parameter distribution and higher efficiency
• IGBT co-packaged with HEXFRED
Benefits
• Latest generation 4 IGBTs offer highest power density
• HEXFRED
• This part replaces the IRGBC30KD2 and IRGBC30MD2
• For hints see design tip 97003
Absolute Maximum Ratings
Thermal Resistance
Features
Features
Features
Features
Features
R
R
R
R
Wt
www.irf.com
V
I
I
I
I
I
I
t
V
P
P
T
T
t
V
switching speed
ultrasoft recovery antiparallel diodes
Minimized recovery characteristics reduce noise, EMI and
C
C
CM
LM
F
FM
sc
products
sc
than previous generations
switching losses
STG
CES
GE
D
D
J
motor controls possible
GE
@ T
@ T
@ T
JC
JC
CS
JA
@ T
@ T
=10µs, @360V V
= 15V
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
TM
diodes optimized for performance with IGBTs.
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
CE
(start), T
Parameter
Parameter
J
TM
= 125°C,
ultrafast,
G
n-ch an nel
Min.
–––
–––
–––
–––
–––
300 (0.063 in. (1.6mm) from case)
IRG4PC30KD
C
E
10 lbf•in (1.1 N•m)
-55 to +150
TO-247AC
Max.
6 (0.21)
± 20
600
100
Typ.
28
16
58
58
12
58
10
42
0.24
–––
–––
–––
Short Circuit Rated
@V
V
CE(on) typ.
UltraFast IGBT
V
GE
CES
= 15V, I
Max.
–––
–––
1.2
2.5
40
= 600V
PD -91587A
C
2.21V
= 16A
4/15/2000
Units
Units
g (oz)
°C/W
µs
°C
V
A
V
W
1

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IRG4PC30KD Summary of contents

Page 1

... J G n-ch an nel TM ultrafast, 300 (0.063 in. (1.6mm) from case) Min. ––– ––– ––– ––– ––– PD -91587A IRG4PC30KD Short Circuit Rated UltraFast IGBT 600V CES V 2.21V CE(on) typ 15V 16A GE C ...

Page 2

... IRG4PC30KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop FM I Gate-to-Emitter Leakage Current ...

Page 3

... Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 100 150 15V 0 Fig Typical Transfer Characteristics IRG4PC30KD For both: D uty cy cle: 50 125° 90°C s ink G ate drive as specified Dis sip ation = 50V CC 5µs PULSE WIDTH ...

Page 4

... IRG4PC30KD 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 4 15V PULSE WIDTH 3.0 2.0 1.0 -60 -40 -20 125 150 ° ...

Page 5

... Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs Ohm 15V 480V CC 1 0.1 -60 -40 - Fig Typical Switching Losses vs. IRG4PC30KD = 400V = 16A Total Gate Charge (nC) G Gate-to-Emitter Voltage 8. 100 120 140 160 ° Junction Temperature ( Junction Temperature 80 5 ...

Page 6

... IRG4PC30KD 5 Ohm 150 C ° 480V 15V 4.0 GE 3.0 2.0 1.0 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 100 0° 5° 5° 0.4 0.8 1.2 1.6 2.0 Fo rwa rd V oltage D rop - 20V GE 125° ...

Page 7

... ° ° /µ Fig Typical Reverse Recovery vs ° ° 6 / /µs) f Fig Typical Stored Charge vs. di www.irf.com ° ° . Fig Typical Recovery Current vs /dt Fig Typical di f IRG4PC30KD / /µ ° ° 6 /µ /dt vs. di /dt (rec / ...

Page 8

... IRG4PC30KD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on) 8 Same ty pe device . d(off) f Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Vce Fig. 18d - , µ S ...

Page 9

... Figure 18e µ Figure 19. www.irf.com D.U. 480V Figure 20. IRG4PC30KD 480V @25° ...

Page 10

... IRG4PC30KD Notes: Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE (figure 20 =80%( =20V, L=10µ CES GE S Pulse width 80µs; duty factor 0.1%. T Pulse width 5.0µs, single shot. Case Outline — TO-247AC (. (. (. (. (. (. (. (. (. (. (. EDEC 47AC (T O -3P) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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