IRG4BC20KD-S International Rectifier, IRG4BC20KD-S Datasheet
IRG4BC20KD-S
Specifications of IRG4BC20KD-S
Related parts for IRG4BC20KD-S
IRG4BC20KD-S Summary of contents
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... Mounting Torque, 6- Screw. Thermal Resistance Parameter R Junction-to-Case - IGBT JC R Junction-to-Case - Diode JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient ( PCB Mounted,steady-state Weight www.irf.com IRG4BC20KD-S = 15V ultrafast, n-ch an nel 300 (0.063 in. (1.6mm) from case) PD -91598A Short Circuit Rated UltraFast IGBT 600V CES V 2.27V CE(on) typ. ...
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... IRG4BC20KD-S Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop FM I Gate-to-Emitter Leakage Current ...
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... V , Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 100 150 Fig Typical Transfer Characteristics IRG4BC20KD-S For both: D uty cy cle: 50 125° 90°C 55°C s ink G ate drive as specified Dis sip ation = 1 50V CC 5µs PULSE WIDTH ...
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... IRG4BC20KD 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 5 15V PULSE WIDTH 4.0 3.0 2.0 1.0 125 150 -60 -40 -20 ° ...
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... G G Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs 0.1 -60 -40 - Fig Typical Switching Losses vs. IRG4BC20KD-S = 400V = 9. Total Gate Charge (nC) G Gate-to-Emitter Voltage = Ohm 50 = 15V = 480V 9. 4 100 120 140 160 ° Junction Temperature ( Junction Temperature 40 ...
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... IRG4BC20KD Ohm 150 C ° 480V 15V GE 2.0 1.0 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 0.1 Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 100 0° 5° 5° 0.4 0.8 1.2 1.6 2.0 2.4 2.8 Fo rwa rd V oltage D rop - V ...
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... ° ° /µ Fig Typical Reverse Recovery vs ° ° . / /µs) f Fig Typical Stored Charge vs. di www.irf.com . Fig Typical Recovery Current vs /dt Fig Typical di f IRG4BC20KD ° ° 4 / /µ ° ° . 8 / /µs) f /dt vs. di /dt (rec / ...
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... IRG4BC20KD-S 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on) 8 Same ty pe device . d(off) f Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Vce Fig. 18d - , µ S ...
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... µ Tape & Reel Information 2 D Pak (. (. 0. AX EIA SIO LIM EAS IST www.irf.com D .U D.U. 480V 1 1 5 5 1 1 3. 2. 62) 3 0.4 0 ( IRG4BC20KD-S 480V @25° ...
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... IRG4BC20KD-S Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE S Pulse width 80µs; duty factor 0.1%. T Pulse width 5.0µs, single shot. U When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...