IRG4BC30W-S International Rectifier, IRG4BC30W-S Datasheet

IRG4BC30W-S

Manufacturer Part Number

IRG4BC30W-S

Description

IGBT WARP 600V 23A D2PAK

Manufacturer

International Rectifier

Datasheet

1.IRG4BC30W-S.pdf (9 pages)

Specifications of IRG4BC30W-S

Voltage - Collector Emitter Breakdown (max)

600V

Vce(on) (max) @ Vge, Ic

2.7V @ 15V, 12A

Current - Collector (ic) (max)

23A

Power - Max

100W

Input Type

Standard

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Igbt Type

Other names

*IRG4BC30W-S

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRG4BC30W-SPBF

Manufacturer:

Quantity:

12 500

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INSULATED GATE BIPOLAR TRANSISTOR

Benefits

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

Features

• Lower switching losses allow more cost-effective

• Of particular benefit to single-ended converters and

• Low conduction losses and minimal minority-carrier

• Designed expressly for Switch-Mode Power

• Industry-benchmark switching losses improve

• 50% reduction of Eoff parameter

• Low IGBT conduction losses

• Latest-generation IGBT design and construction offers

When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering

operation than power MOSFETs up to 150 kHz

("hard switched" mode)

boost PFC topologies 150W and higher

recombination make these an excellent option for

resonant mode switching as well (up to >>300 kHz)

Supply and PFC (power factor correction)

applications

efficiency of all power supply topologies

tighter parameters distribution, exceptional reliability

STG

CES

ARV

techniques refer to application note #AN-994.

@ T

= 25°C

= 100°C

= 25°C

= 100°C

Junction-to-Case

Junction-to-Ambient, ( PCB Mounted,steady-state)*

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Parameter

n-channel

300 (0.063 in. (1.6mm from case )

IRG4BC30W-S

Typ.

–––

-55 to + 150

D P a k

Max.

± 20

600

180

100

CE(on) typ.

Max.

1.2

CES

= 15V, I

= 600V

= 2.10V

Units

= 12A

Units

°C/W

°C

8/13/98

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IRG4BC30W-S Summary of contents

Page 1

... Storage Temperature Range STG Soldering Temperature, for 10 seconds Thermal Resistance Parameter R Junction-to-Case JC R Junction-to-Ambient, ( PCB Mounted,steady-state When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com IRG4BC30W CES V CE(on) typ 15V n-channel Max. ...

Page 2

Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage (BR)ECS Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th Temperature Coeff. ...

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IRG4BC30W-S International Rectifier, IRG4BC30W-S Datasheet

IRG4BC30W-S

Specifications of IRG4BC30W-S

Available stocks

Related parts for IRG4BC30W-S

IRG4BC30W-S Summary of contents

Page 1

Page 2

Page 3

Page 4

Page 5

Page 6

Page 7

Page 8

Page 9

Related keywords