IRG4BC20FD-STRL International Rectifier, IRG4BC20FD-STRL Datasheet
IRG4BC20FD-STRL
Specifications of IRG4BC20FD-STRL
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IRG4BC20FD-STRL Summary of contents
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... Junction-to-Case - IGBT JC R Junction-to-Case - Diode JC R Junction-to-Ambient ( PCB Mounted,steady-state Weight * When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com IRG4BC20FD ultrafast, n-cha -91783A Fast CoPack IGBT 600V CES V = 1.66V CE(on) typ. ...
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... IRG4BC20FD-S Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop FM I Gate-to-Emitter Leakage Current ...
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... Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 100 150 15V Fig Typical Transfer Characteristics IRG4BC20FD-S Mounted on PCB For both: D uty cy cle: 50 125° 90°C 55°C s ink G ate drive as specified 1. Dis sip ation = ...
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... IRG4BC20FD 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 10 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3 15V PULSE WIDTH 2.0 1.0 125 150 -60 -40 -20 ° ...
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... Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs 50Ohm 15V 480V CC 1 0.1 -60 -40 - Fig Typical Switching Losses vs. IRG4BC20FD-S = 400V = 9. Total Gate Charge (nC) G Gate-to-Emitter Voltage 9 4 100 120 140 160 ° Junction Temperature ( Junction Temperature 30 ...
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... IRG4BC20FD 50Ohm 150 C ° 480V CC 2 15V GE 2.0 1.5 1.0 0.5 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 0.1 Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 100 ° ° ° 0.4 0.8 1.2 1.6 2.0 2.4 2 lta 20V ...
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... ° ° /µ Fig Typical Reverse Recovery vs ° ° . / /µs) f Fig Typical Stored Charge vs. di www.irf.com . Fig Typical Recovery Current vs /dt Fig Typical di f IRG4BC20FD ° ° 4 / /µ ° ° 4 /µ /dt vs. di /dt (rec / ...
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... IRG4BC20FD-S 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on) 8 Same ty pe device as D .U. . 90% 10 d(off d(on) Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Vce Ic dt ...
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... Tape & Reel Information 2 D Pak (. (. 0. AX EIA SIO LIM EAS IST www.irf.com ICE D .U Figure 18a's D.U. 480V Figure 20. Pulsed Collector Current 1 1 5 5 1 1 3. 2. 62) 3 0.4 0 ( IRG4BC20FD-S Test Circuit 480V @25°C C Test Circuit ...
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... IRG4BC20FD-S Notes: Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE S Pulse width 80µs; duty factor 0.1%. T Pulse width 5.0µs, single shot Pak Package Outline (. (. (. (. (. (. (. (. (. (. (. (. (. & & WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...