MGP15N40CLG ON Semiconductor, MGP15N40CLG Datasheet

MGP15N40CLG

Manufacturer Part Number

MGP15N40CLG

Description

IGBT IGNIT N-CH 15A 410V T0220AB

Manufacturer

ON Semiconductor

Datasheet

1.MGP15N40CL.pdf (10 pages)

Specifications of MGP15N40CLG

Voltage - Collector Emitter Breakdown (max)

440V

Vce(on) (max) @ Vge, Ic

2.25V @ 4V, 15A

Current - Collector (ic) (max)

15A

Power - Max

150W

Input Type

Logic

Mounting Type

Through Hole

Package / Case

D²Pak, TO-263 (2 leads + tab)

Channel Type

Configuration

Single

Collector Current (dc) (max)

15A

Package Type

TO-220AB

Pin Count

3 +Tab

Mounting

Through Hole

Operating Temperature (max)

175C

Operating Temperature Classification

Military

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Igbt Type

Lead Free Status / Rohs Status

Compliant

Other names

MGP15N40CLGOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MGP15N40CLG

Manufacturer:

Quantity:

10 001

Current page: 1 of 10
Download datasheet (92Kb)

MGP15N40CL,

MGB15N40CL

Ignition IGBT

15 Amps, 410 Volts

N−Channel TO−220 and D

monolithic circuitry integrating ESD and Over−Voltage clamped

protection for use in inductive coil drivers applications. Primary uses

include Ignition, Direct Fuel Injection, or wherever high voltage and

high current switching is required.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MAXIMUM RATINGS

December, 2005 − Rev. 8

Collector−Emitter Voltage

Collector−Gate Voltage

Gate−Emitter Voltage

Collector Current−Continuous

@ T

ESD (Human Body Model) R = 1500 W,

C = 100 pF

ESD (Machine Model) R = 0 W, C = 200 pF

Total Power Dissipation @ T

Derate above 25°C

Operating and Storage Temperature Range

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

System Applications

Stress Applied to Load

Microprocessor Devices

Ideal for Coil−On−Plug, IGBT−On−Coil, or Distributorless Ignition

High Pulsed Current Capability up to 50 A

Gate−Emitter ESD Protection

Temperature Compensated Gate−Collector Voltage Clamp Limits

Integrated ESD Diode Protection

Low Threshold Voltage to Interface Power Loads to Logic or

Low Saturation Voltage

Optional Gate Resistor (R

Pb−Free Package is Available

= 25°C − Pulsed

Rating

(−55°C ≤ T

Preferred Device

= 25°C

)

≤ 175°C unless otherwise noted)

Symbol

ESD

PAK

, T

CES

CER

stg

−55 to 175

Value

440

800

150

8.0

1.0

W/°C

Unit

°C

Gate

See detailed ordering and shipping information in the package

dimensions section on page 8 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

G15N40CL = Device Code

CASE 418B

STYLE 4

Collector

5N40CL

CE(on)

AYWW

410 VOLTS (Clamped)

PAK

ORDERING INFORMATION

MARKING DIAGRAMS

& PIN ASSIGNMENTS

http://onsemi.com

15 AMPERES

= Assembly Location

= Year

= Work Week

= Pb−Free Package

@ 10 A = 1.8 V Max

Emit-

ter

N−Channel

CASE 221A−09

TO−220AB

STYLE 9

Publication Order Number:

Gate

G15N40CLG

Collector

AYWW

MGP15N40CL/D

Emitter

Related parts for MGP15N40CLG

MGP15N40CLG Summary of contents

Page 1

MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N−Channel TO−220 and D This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses ...

Page 2

UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS Characteristic Single Pulse Collector−to−Emitter Avalanche Energy 5 17 2.0 mH, Starting 5.0 V, ...

Page 3

ELECTRICAL CHARACTERISTICS (continued) Characteristic (continued) ON CHARACTERISTICS (Note 3) Collector−to−Emitter On−Voltage Collector−to−Emitter On−Voltage Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3) Turn−Off Delay Time (Inductive) Fall Time (Inductive) Turn−Off Delay Time (Resistive) Fall Time ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS 10 5 25° COLLECTOR TO EMITTER VOLTAGE (VOLTS) CE Figure 1. Output ...

Page 5

T = 25° 150° INDUCTOR (mH) Figure 7. Minimum Open Secondary Latch Current vs. Inductor 25° 150° ...

Page 6

R , EXTERNAL GATE RESISTANCE (W) G Figure 13. Switching Speed vs. External Gate Resistance 10 Duty Cycle = 0.5 1 0.2 0.1 0.05 0.02 ...

Page 7

Figure 16. Test Fixture for Transient Thermal Curve (48 square inches of 1/8, thick aluminum) 100 100 ms 0.1 0. COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 17. Single Pulse Safe Operating Area (Mounted on an Infinite ...

Page 8

... Figure 19. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at T ORDERING INFORMATION Device MGP15N40CL MGP15N40CLG MGB15N40CLT4 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MGP15N40CL, MGB15N40CL ...

Page 9

... SEATING PLANE 0.13 (0.005 VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS 2 D PAK 3 CASE 418B−04 ISSUE ...

Page 10

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 10 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

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