MMBFJ177LT1 ON Semiconductor, MMBFJ177LT1 Datasheet - Page 2

• Manufacturer Part Number: MMBFJ177LT1
• Description: JFET SS P-CHAN 25V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBFJ177LT1

• Current - Drain (idss) @ Vds (vgs=0): 1.5mA @ 15V
• Fet Type: P-Channel
• Voltage - Breakdown (v(br)gss): 30V
• Voltage - Cutoff (vgs Off) @ Id: 800mV @ 10nA
• Input Capacitance (ciss) @ Vds: 11pF @ 10V (VGS)
• Resistance - Rds(on): 300 Ohm
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Power - Max: 225mW
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MMBFJ177LT1OSCT

2. Pulse Test: Pulse Width < 300 ms, Duty Cycle ≤ 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Gate−Source Breakdown Voltage (V
Gate Reverse Current (V
Gate Source Cutoff Voltage (V
Zero−Gate−Voltage Drain Current (V
Drain Cutoff Current (V
Drain Source On Resistance (I
Input Capacitance
Reverse Transfer Capacitance
DS
DS
= 15 Vdc, V
= 0 Vdc, V
DS
D
= 500 mAdc)
= 15 Vdc, I
Characteristic
DS
GS
GS
GS
= 0, I
= 0, V
(T
= 10 Vdc)
= 20 Vdc)
A
D
D
= 25°C unless otherwise noted)
DS
= 10 nAdc)
= 1.0 mAdc)
= 15 Vdc) (Note 2)
V
DS
http://onsemi.com
= 0, V
f = 1.0 MHz
GS
= 10 Vdc
2
V
Symbol
V
r
(BR)GSS
I
DS(on)
I
GS(off)
I
D(off)
C
C
GSS
DSS
rss
iss
Min
0.8
1.5
30
−
−
−
−
−
Max
300
1.0
2.5
1.0
5.5
20
11
−
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
pF
W