DMN2004VK-7 Diodes Inc, DMN2004VK-7 Datasheet - Page 2

• Manufacturer Part Number: DMN2004VK-7
• Description: MOSFET DUAL N-CHAN 20V SOT-563
• Manufacturer: Diodes Inc

Specifications of DMN2004VK-7

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 540mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Input Capacitance (ciss) @ Vds: 150pF @ 16V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: DMN2004VKDITR

Electrical Characteristics
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
DMN2004VK
Document number: DS30865 Rev. 4 - 2
5. Short duration pulse test used to minimize self-heating effect.
0
0
Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
1
2
@T
A
3
= 25°C unless otherwise specified
Symbol
R
4
BV
V
DS (ON)
t
t
I
I
C
|Y
V
C
GS(th)
C
d(on)
d(off)
DSS
GSS
oss
t
t
SD
rss
DSS
iss
r
fs
f
|
www.diodes.com
5
Min
200
0.5
0.5
2 of 6
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
13.3
53.5
36.1
Typ
0.4
0.5
0.7
8.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Fig. 2
Reverse Drain Current vs. Source-Drain Voltage
Max
0.55
0.70
150
1.0
0.9
1.4
V
±1
25
20
⎯
⎯
⎯
⎯
⎯
⎯
1
GS
, GATE-SOURCE VOLTAGE (V)
Unit
μA
μA
ms
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
I
R
D
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
DD
G
= 200mA. V
= 10Ω
= 16V, V
= V
=10V, I
= 0V, I
= 2.5V, I
= 16V, V
= 10V, R
= ±4.5V, V
= 4.5V, I
= 1.8V, I
= 0V, I
Test Condition
DMN2004VK
GS
, I
D
S
D
D
= 10μA
D
= 115mA
GS
D
D
GS
© Diodes Incorporated
= 0.2A
L
= 250μA
GEN
= 500mA
= 540mA
= 350mA
= 47Ω,
DS
= 0V
= 0V
= 0V
= 4.5V,
July 2010