BSS84DW-7-F Diodes Inc, BSS84DW-7-F Datasheet

BSS84DW-7-F

Manufacturer Part Number

BSS84DW-7-F

Description

MOSFET P-CHAN DUAL 50V SC70-6

Manufacturer

Diodes Inc

Datasheet

1.BSS84DW-7-F.pdf (3 pages)

Specifications of BSS84DW-7-F

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

10 Ohm @ 100mA, 5V

Drain To Source Voltage (vdss)

50V

Current - Continuous Drain (id) @ 25° C

130mA

Vgs(th) (max) @ Id

2V @ 1mA

Input Capacitance (ciss) @ Vds

45pF @ 25V

Power - Max

300mW

Mounting Type

Surface Mount

Package / Case

SC-70-6, SC-88, SOT-363

Configuration

Dual

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

10 Ohm @ 5 V

Forward Transconductance Gfs (max / Min)

0.05 S

Drain-source Breakdown Voltage

50 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.13 A

Power Dissipation

300 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

BSS84DW-FDITR

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Current page: 1 of 3
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Thermal Characteristics

Electrical Characteristics

Maximum Ratings

Drain-Source Voltage

Drain-Gate Voltage (Note 1)

Gate-Source Voltage

Drain Current (Note 2)

Total Power Dissipation (Note 2)

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Turn-Off Delay Time

Features

•

Notes:

BSS84DW

Document number: DS30204 Rev. 13 - 2

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Lead Free/RoHS Compliant (Note 3)

"Green" Device (Note 5 and 6)

1. R

2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

3. No purposefully added lead.

4. Short duration pulse test used to minimize self-heating effect.

5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

≤ 20KΩ.

Characteristic

= 25°C unless otherwise specified

TOP VIEW

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Continuous

www.diodes.com

SOT-363

Symbol

DS (ON)

D(OFF)

D(ON)

1 of 3

GS(th)

DSS

GSS

oss

rss

DSS

iss

Mechanical Data

Symbol

•

, T

DGR

GSS

DSS

0.05

Min

-0.8

θ JA

-50

⎯

STG

Case: SOT-363

Case Material: Molded Plastic. “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

Terminal Connections: See Diagram

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.006 grams (approximate)

Typ

-1.6

-75

Internal Schematic

⎯

TOP VIEW

Max

-100

±10

-2.0

-15

-60

⎯

Unit

µA

-55 to +150

Value

-130

±20

300

417

-50

GEN

= -50V, V

= -25V, V

= -25V, I

= V

= -25V, V

= -30V, I

= 0V, I

= ±20V, V

= -5V, I

= 50Ω, V

, I

Test Condition

= -250μA

= -0.100A

= -1mA

= -0.1A

= -0.27A,

= 0V, T

= 0V, f = 1.0MHz

= 0V

= -10V

BSS84DW

Units

°C/W

November 2007

= 25°C

= 125°C

= 25°C

°C

Related parts for BSS84DW-7-F

BSS84DW-7-F Summary of contents

Page 1

... V GS(th) ⎯ (ON) ⎯ g 0.05 FS ⎯ ⎯ C iss ⎯ ⎯ C oss ⎯ ⎯ C rss ⎯ D(ON) ⎯ D(OFF www.diodes.com BSS84DW TOP VIEW Value Units -50 -50 ±20 -130 Value Units 300 °C/W 417 -55 to +150 Max Unit Test Condition ⎯ 0V -250μA ...

Page 2

... Fig. 2 Drain-Source Current vs. Drain-Source Voltage 25.0 20.0 15.0 10.0 5.0 0.0 125 150 -0.0 100 www.diodes.com BSS84DW ° DRAIN-SOURCE VOLTAGE ( 125 C ° A ° GATE-SOURCE VOLTAGE (V) GS Fig. 4 On-Resistance vs. Gate-Source Voltage V = -3. - -4. - -4V GS ...

Page 3

... Ordering Information (Note 7) Part Number BSS84DW-7-F Notes: 7. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K84 YM Date Code Key Year 1998 1999 2000 Code Month Jan Feb Mar Code 1 2 Package Outline Dimensions Suggested Pad Layout Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein ...

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