SI5904DC-T1-E3 Vishay, SI5904DC-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI5904DC-T1-E3
• Description: MOSFET DUAL N-CH 20V 3.1A 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5904DC-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.2A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 134mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5904DC-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71065
S10-0548-Rev. D, 08-Mar-10
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
= 3.1 A
V
Source-Drain Diode Forward Voltage
= 10 V
GS
On-Resistance vs. Drain Current
0.2
= 2.5 V
2
V
1
SD
Q
g
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
0.4
I
D
Gate Charge
- Drain Current (A)
T
4
J
= 150 °C
0.6
2
6
0.8
V
GS
3
T
J
8
= 4.5 V
= 25 °C
1.0
10
1.2
4
0.20
0.15
0.10
0.05
0.00
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
rss
V
I
C
- 25
D
GS
iss
= 3.1 A
= 4.5 V
4
1
V
V
T
C
0
GS
DS
J
oss
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
8
2
50
Vishay Siliconix
I
D
12
= 3.1 A
3
75
Si5904DC
www.vishay.com
100
16
4
125
150
20
5
3