ZXMC3A16DN8TA Diodes Zetex, ZXMC3A16DN8TA Datasheet

MOSFET N/P-CHAN DUAL 30V 8SOIC

ZXMC3A16DN8TA

Manufacturer Part Number
ZXMC3A16DN8TA
Description
MOSFET N/P-CHAN DUAL 30V 8SOIC
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMC3A16DN8TA

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.9A, 4.1A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
17.5nC @ 10V
Input Capacitance (ciss) @ Vds
796pF @ 25V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMC3A16DN8TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMC3A16DN8TA
Manufacturer:
ZETEX
Quantity:
20 000
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V
P-Channel V
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ZXMC
3A16
ISSUE 1 - OCTOBER 2005
DEVICE
ZXMC3A16DN8TA
ZXMC3A16DN8TC
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
Motor Drive
LCD backlighting
(BR)DSS
(BR)DSS
= -30V; R
= 30V; R
REEL
13’‘
7
’‘
WIDTH
12mm
12mm
TAPE
DS(ON)
DS(ON)
= 0.035 ; I
= 0.048 ; I
QUANTITY
2500 units
PER REEL
500 units
D
D
= 6.4A
1
= -5.4A
Q1 = N-CHANNEL
ZXMC3A16DN8
Top view
Q2 = P-CHANNEL
PINOUT
SO8

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ZXMC3A16DN8TA Summary of contents

Page 1

... Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • Motor Drive • LCD backlighting ORDERING INFORMATION DEVICE REEL TAPE WIDTH ZXMC3A16DN8TA 7 12mm ’‘ ZXMC3A16DN8TC 13’‘ 12mm DEVICE MARKING ZXMC 3A16 ISSUE 1 - OCTOBER 2005 = 0.035 ; 0.048 ; ...

Page 2

ZXMC3A16DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V =10V =10V =10V (c) Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (a)(d) Power Dissipation ...

Page 3

ISSUE 1 - OCTOBER 2005 ZXMC3A16DN8 CHARACTERISTICS 3 ...

Page 4

ZXMC3A16DN8 N-CHANNEL ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1)(3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) SWITCHING ...

Page 5

P-CHANNEL ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State (1) Resistance (1)(3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) SWITCHING ...

Page 6

ZXMC3A16DN8 N-CHANNEL TYPICAL CHARACTERISTICS 10V T = 25° 0.1 0.01 0 Drain-Source Voltage (V) DS Output Characteristics 150° 25° Gate-Source Voltage (V) GS Typical Transfer ...

Page 7

N-CHANNEL TYPICAL CHARACTERISTICS 1200 1000 800 C ISS C 600 OSS 400 200 0 0 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage ISSUE 1 - OCTOBER 2005 3.5A ...

Page 8

ZXMC3A16DN8 P-CHANNEL TYPICAL CHARACTERISTICS 10V 25° 0.1 0.01 0 Drain-Source Voltage (V) DS Output Characteristics 150° 25° Gate-Source Voltage (V) GS Typical Transfer ...

Page 9

P-CHANNEL TYPICAL CHARACTERISTICS 1400 1200 1000 C 800 ISS C OSS 600 400 200 0 0 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage ISSUE 1 - OCTOBER 2005 ...

Page 10

ZXMC3A16DN8 PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETERS PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 H 5.80 6.20 0.228 0.244 ...

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