SP8K2TB Rohm Semiconductor, SP8K2TB Datasheet - Page 3

• Manufacturer Part Number: SP8K2TB
• Description: MOSFET 2N-CH 30V 6A 8-SOIC
• Manufacturer: Rohm Semiconductor

Specifications of SP8K2TB

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 10.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 520pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP8K2TB; SP8K2TBTR

Transistors
Electrical characteristic curves
10000
0.001
1000
0.01
100
0.1
1000
10
10
100
0.01
1
Fig.4 Typical Transfer Characteristics
0.0
10
1
0.1
Fig.1 Typical Capacitance
DRAIN-SOURCE VOLTAGE : V
GATE-SOURCE VOLTAGE : V
Ta 125 C
Ta 75 C
Ta 25 C
Ta
0.5
Fig.7 Static Drain-Source
Ta 125 C
Ta 75 C
Ta 25 C
Ta
vs. Drain-Source Voltage
25 C
0.1
1.0
DRAIN CURRENT : I
25 C
On-State Resistance
vs. Drain Current ( )
1.5
2.0
1
1
2.5
3.0
10
Ta 25 C
f 1MHz
V
V
Pulsed
D
GS
DS
V
Pulsed
(A)
GS
GS
DS
3.5
10V
0V
C
C
C
(V)
10V
(V)
iss
oss
rss
100
4.0
10
1000
1000
100
200
150
100
100
10
10
0.01
50
1
1
0
0.1
Fig.2 Switching Characteristics
0
t
t
d (on)
t
Fig.5 Static Drain-Source
d (off)
r
Ta 125 C
Ta 75 C
Ta 25 C
Ta
GATE-SOURCE VOLTAGE : V
Fig.8 Static Drain-Source
t
2
f
25 C
DRAIN CURRENT : I
DRAIN CURRENT : I
DRAIN CURRENT : I
On-State Resistance vs.
Gate-Source Voltage
4
On-State Resistance
vs. Drain Current ( )
0.1
I
I
D
D
6A
3A
6
1
8
10
1
D
D
D
12
Ta 25 C
V
V
R
Pulsed
(A)
(A)
V
Pulsed
Ta 25 C
Pulsed
(A)
DD
GS
G
GS
10
GS
15V
10V
14
4.5V
(V)
10
10
16
1000
0.01
100
0.1
10
10
10
1
9
8
7
6
5
4
3
2
1
0
1
0.0
0.1
Fig.3 Dynamic Input Characteristics
0
Ta 25 C
V
I
R
Pulsed
Ta 125 C
Ta 75 C
Ta 25 C
Ta
D
SOURCE-DRAIN VOLTAGE : V
DD
G
Fig.9 Static Drain-Source
Fig.6 Source Current vs.
Ta 125 C
Ta 75 C
Ta 25 C
Ta
6A
TOTAL GATE CHARGE : Qg (nC)
10
2
15V
25 C
DRAIN CURRENT : I
25 C
On-State Resistance
vs. Drain Current ( )
Source-Drain Voltage
4
0.5
6
1
8
1.0
10
SP8K2
D
(A)
12
V
Pulsed
V
Pulsed
GS
GS
SD
(V)
14
0V
4V
3/3
1.5
10