SP8M3TB Rohm Semiconductor, SP8M3TB Datasheet - Page 3

• Manufacturer Part Number: SP8M3TB
• Description: MOSFET N+P 30V 4.5A 8-SOIC
• Manufacturer: Rohm Semiconductor

Specifications of SP8M3TB

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 51 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A, 4.5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 3.9nC @ 5V
• Input Capacitance (ciss) @ Vds: 230pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP8M3TBTR

Transistors
P-ch
∗Pulsed
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-Drain Characteristics) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
Y
GSS
DSS
Q
t
t
oss
SD
iss
rss
r
gd
fs
f
gs
g
Min.
−1.0
Min.
−30
3.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
850
190
120
8.5
2.5
3.0
40
57
65
10
25
60
25
−
−
−
−
−
−
Max.
Max.
−2.5
−1.2
−10
−1
56
80
90
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
µA
µA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
I
V
V
f=1MHz
I
V
R
R
V
V
I
I
D
D
D
D
D
D
D
S
GS
DS
DS
DS
GS
GS
L
G
DD
GS
= −1.6A, V
= −1mA, V
= −4.5A, V
= −2.5A, V
= −2.5A, V
= −2.5A, V
= −2.5A, V
= −4.5A
=6.0Ω
=10Ω
=−30V, V
= −10V, I
= −10V
= −20V, V
=0V
= −10V
= −5V
−15V
Conditions
Conditions
GS
GS
GS
GS
DS
DD
GS
D
GS
DS
= −1mA
=0V
= −10V
= −4.5V
= −4.0V
= −10V
=0V
=0V
=0V
−15V
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Rev.A
SP8M3
3/5