IRF7303TRPBF International Rectifier, IRF7303TRPBF Datasheet - Page 8

• Manufacturer Part Number: IRF7303TRPBF
• Description: MOSFET 2N-CH 30V 4.9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7303TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 520pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Current, Drain: 4.9 A
• Gate Charge, Total: 25 nC
• Package Type: SO-8
• Polarization: Dual N-Channel
• Power Dissipation: 2 W
• Resistance, Drain To Source On: 0.05 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 22 ns
• Time, Turn-on Delay: 6.8 ns
• Transconductance, Forward: 5.2 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 1 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.9A
• Power Dissipation Pd: 2W
• No. Of Pins: 8
• Thermal Resistance, Junction-case: 62.5°C/W
• Gate-to-drain Charge: 5.3nC
• Rohs Compliant: Yes
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.05Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 4.9A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Drain Source On Resistance @ 10v: 50mohm
• Configuration: Dual
• Resistance Drain-source Rds (on): 80 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 4.9 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 16.7 nC
• Drain Source On Resistance @ 4.5v: 80mohm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7303PBFTR

SO-8 Package Outline
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INTERNAT IONAL
RECT IFIER
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMETER
3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O
A
E
LOGO
MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006].
MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010].
A S UBS T RAT E.
6
6X
0.25 [.010]
e
8
1
7
2
8X b
D
6
3
C A B
5
5
4
e1
A1
B
0.25 [.010]
A
H
F7101
C
0.10 [.004]
XXXX
A
y
DAT E CODE (YWW)
P = DESIGNAT ES LEAD-FREE
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = ASS EMBLY SIT E CODE
PART NUMBER
LOT CODE
3X 1.27 [.050]
8X L
6.46 [.255]
PRODUCT (OPT IONAL)
7
DIM
K x 45°
e 1
A
A1
b
c
D
E
e
H
K
L
y
.0532
.0040
.013
.0075
.189
.1497
.050 BASIC
.025 BASIC
.2284
.0099
.016
MIN
0°
INCHES
8X c
FOOT PRINT
.0688
.0098
.020
.0098
.1968
.1574
.2440
.0196
.050
MAX
8°
8X 0.72 [.028]
MILLIMET ERS
1.35
0.10
0.33
0.19
4.80
3.80
1.27 BASIC
0.635 BAS IC
5.80
0.25
0.40
MIN
0°
8X 1.78 [.070]
1.75
0.25
0.51
0.25
5.00
4.00
6.20
0.50
1.27
MAX
8°