SI1026X-T1-E3 Vishay, SI1026X-T1-E3 Datasheet

MOSFET P-CH DUAL 60V SOT563F

SI1026X-T1-E3

Manufacturer Part Number
SI1026X-T1-E3
Description
MOSFET P-CH DUAL 60V SOT563F
Manufacturer
Vishay
Datasheet

Specifications of SI1026X-T1-E3

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.4 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
305mA
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
0.6nC @ 4.5V
Input Capacitance (ciss) @ Vds
30pF @ 25V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-89-6, SOT-563F, SOT-666
Transistor Polarity
N Channel
Continuous Drain Current Id
500mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI1026X-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1026X-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71434
S10-2432-Rev. D, 25-Oct-10
G
D
S
PRODUCT SUMMARY
Ordering Information: Si1026X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
1
1
2
V
DS(min)
1
2
3
60
(V)
Top View
SC-89
1.40 at V
R
b
DS(on)
6
5
4
GS
D
G
S
J
a
()
2
= 10 V
1
2
= 150 °C)
N-Channel 60 V (D-S) MOSFET
a
V
GS(th)
1 to 2.5
Marking Code: E
a
(V)
A
= 25 °C, unless otherwise noted)
I
D
500
(mA)
T
T
T
T
A
A
A
A
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
BENEFITS
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• Low On-Resistance: 1.40 
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 30 pF
• Fast Switching Speed: 15 ns (typ.)
• Low Input and Output Leakage
• ESD Protected: 2000 V
• Miniature Package
• Compliant to RoHS Directive 2002/95/EC
• Low Offset Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Error Voltage
• Small Board Area
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
• Battery Operated Systems
• Solid-State Relays
Symbol
T
Definition
Memories, Transistors, etc.
J
ESD
V
V
I
P
, T
DM
I
I
GS
DS
D
S
D
stg
320
230
450
280
145
5 s
- 55 to 150
- 650
2000
± 20
60
Steady State
305
220
380
250
130
Vishay Siliconix
Si1026X
www.vishay.com
Unit
mW
mA
°C
V
V
1

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SI1026X-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si1026X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 ° Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes: a ...

Page 2

... Si1026X Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Symbol Static V Drain-Source Breakdown Voltage V Gate Threshold Voltage GS(th) I Gate-Body Leakage I Zero Gate Voltage Drain Current a I On-State Drain Current D(on Drain-Source On-Resistance DS(on) a Forward Transconductance a V Diode Forward Voltage b Dynamic Total Gate Charge ...

Page 3

... 250 0.0 0.1 0.2 0 Total Gate Charge (nC) g Gate Charge Document Number: 71434 S10-2432-Rev. D, 25-Oct- 600 800 1000 0.4 0.5 0.6 Si1026X Vishay Siliconix 1200 °C J 900 600 300 Gate-to-Source Voltage (V) GS Transfer Characteristics MHz iss 20 C oss 10 C rss Drain-to-Source Voltage (V) ...

Page 4

... Si1026X Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 100 T = 125 ° 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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