SI1917EDH-T1-E3 Vishay, SI1917EDH-T1-E3 Datasheet

MOSFET P-CH DUAL 12V SC70-6

SI1917EDH-T1-E3

Manufacturer Part Number
SI1917EDH-T1-E3
Description
MOSFET P-CH DUAL 12V SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI1917EDH-T1-E3

Transistor Polarity
P-Channel
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
370 mOhm @ 1A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
450mV @ 100µA
Gate Charge (qg) @ Vgs
2nC @ 4.5V
Power - Max
570mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.37 Ohm @ 4.5 V
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
1 A
Power Dissipation
570 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-1.15A
Drain Source Voltage Vds
-12V
On Resistance Rds(on)
800mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
-450mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1917EDH-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1917EDH-T1-E3
Manufacturer:
TI
Quantity:
22 846
Part Number:
SI1917EDH-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI1917EDH-T1-E3
Quantity:
4 361
Company:
Part Number:
SI1917EDH-T1-E3
Quantity:
3 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71414
S10-1054-Rev. B, 03-May-10
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
G
Ordering Information: Si1917EDH-T1-E3 (Lead (Pb)-free)
S
D
- 12
1
1
2
(V)
1
2
3
SC-70 (6-LEADS)
SOT-363
Top View
0.370 at V
0.575 at V
0.800 at V
Si1917EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
J
a
DS(on)
6
5
4
= 150 °C)
a
Dual P-Channel 12 V (D-S) MOSFET
GS
GS
GS
D
G
S
2
(Ω)
= - 4.5 V
= - 2.5 V
= - 1.8 V
1
2
a
Marking Code
DB XX
a
Steady State
Steady State
t ≤ 5 s
T
T
T
T
Part # Code
A
A
A
A
A
= 25 °C
= 85 °C
= 25 °C
= 85 °C
= 25 °C, unless otherwise noted
I
- 1.15
- 0.92
- 0.78
D
(A)
Lot Traceability
and Date Code
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
I
P
, T
I
DM
G
I
DS
GS
D
S
D
FEATURES
APPLICATIONS
1
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• ESD Protected: 3000 V
• Thermally Enhanced SC-70 Package
• Compliant to RoHS Directive 2002/95/EC
• Load Switching
• PA Switch
• Level Switch
Definition
3 k
Typical
130
170
80
- 1.15
- 0.83
- 0.61
0.73
0.38
®
5 s
Power MOSFETs: 1.8 V Rated
S
- 55 to 150
D
1
1
± 12
- 12
- 3
G
Steady State
2
Maximum
- 1.00
- 0.73
- 0.47
170
220
100
0.57
0.30
Vishay Siliconix
Si1917EDH
3 k
www.vishay.com
°C/W
Unit
Unit
°C
D
S
W
V
A
2
2
1

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SI1917EDH-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si1917EDH-T1-E3 (Lead (Pb)-free) Si1917EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Diode Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si1917EDH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 71414 S10-1054-Rev. B, 03-May- thru 2.0 2.5 3.0 1.0 1.2 1.4 Si1917EDH Vishay Siliconix 3 °C C 2.5 25 °C 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... Si1917EDH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0 0.2 0.4 0 Source-Drain Diode Forward Voltage 0 100 µA D 0.2 0 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com °C J 0.8 1.0 1 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71414. Document Number: 71414 S10-1054-Rev. B, 03-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si1917EDH Vishay Siliconix -1 1 www.vishay.com ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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