SI4834BDY-T1-E3 Vishay, SI4834BDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4834BDY-T1-E3
• Description: MOSFET DUAL N-CH 30V 5.7A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4834BDY-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.7 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4834BDY-T1-E3TR

MOSFET TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
Document Number: 72064
S09-0869-Rev. D, 18-May-09
0.040
0.030
0.020
0.010
0.000
10
30
25
20
15
10
8
6
4
2
0
5
0
0
0
0
V
I
D
V
DS
GS
On-Resistance vs. Drain Current
= 7.5 A
5
3
2
= 15 V
V
= 10 V thru 5 V
DS
Output Characteristics
V
- Drain-to-Source Voltage (V)
Q
GS
10
I
g
D
- Total Gate Charge (nC)
= 4.5 V
Gate Charge
- Drain Current (A)
6
4
15
4 V
9
6
20
V
GS
3 V
= 10 V
12
8
25
15
10
30
1200
960
720
480
240
1.8
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
0
- 50
5
0
0
0
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 7.5 A
C
5
rss
= 10 V
V
1
T
DS
V
0
J
GS
Transfer Characteristics
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
T
- Gate-to-Source Voltage (V)
10
C
25
= 125 °C
25 °C
Capacitance
2
50
15
C
Vishay Siliconix
iss
C
oss
Si4834BDY
75
3
20
100
- 55 °C
www.vishay.com
4
25
125
150
30
5
3