IXTL2X240N055T IXYS, IXTL2X240N055T Datasheet
IXTL2X240N055T
Manufacturer Part Number
IXTL2X240N055T
Description
MOSFET N-CH 55V 140A ISOPLUS I5
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet
1.IXTL2X240N055T.pdf
(2 pages)
Specifications of IXTL2X240N055T
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.4 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
140A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
7600pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
ISOPLUSi5-Pak™
Configuration
Dual Common Gate
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0044 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2140 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
55
Id(cont), Tc=25°c, (a)
140
Rds(on), Max, Tj=25°c, (?)
0.0044
Ciss, Typ, (pf)
7600
Qg, Typ, (nc)
170
Trr, Typ, (ns)
40
Trr, Max, (ns)
-
Pd, (w)
150
Rthjc, Max, (k/w)
1.00
Package Style
ISOPLUS i5-Pak
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchMV
Power MOSFETs
Common-Gate Pair
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
V
.
F
Weight
Symbol
(T
BV
V
I
I
R
All ratings and parametric values are per each MOSFET die unless otherwise specified.
© 2007 IXYS CORPORATION All rights reserved
LRMS
DM
D25
AS
GSS
DSS
J
JM
stg
L
C
DSS
DGR
GSM
AS
D
ISOL
GS(th)
DS(on)
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
(Combined die total = 280 A)
Package Current Limit, RMS
(Combined die total = 150 A)
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
50/60 Hz, t = 1 minute, I
Mounting force
Package
Test Conditions
V
V
V
V
V
S
V
C
C
C
C
J
C
GS
GS
J
J
GS
DS
DS
GS
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
≤ 175°C, R
= 25°C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
TM
DSS
, I
D
D
D
= 250 μA
= 250 μA
= 50 A, Note 1, 2
G
DS
= 3.3 Ω
= 0 V
GS
ISOL
Advance Technical Information
= 1 MΩ
DD
< 1 mA, RMS
T
≤ V
J
= 150°C
IXTL2x240N055T
DSS
JM
Min.
2.0
30..170 / 7..36
55
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
Typ.
D
S
2500
± 20
140
650
150
175
300
260
1.0
75
55
55
25
3
9
R
± 200 nA
G
G
Max.
250 μA
4.0
4.4 m Ω
5 μA
R
V/ns
N/lb.
G
°C
°C
°C
°C
°C
W
V
V
V
A
V
V
V
A
A
A
g
J
D
S
G = Gate
S = Source
Features
Advantages
Applications
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Easy to mount
Space savings
High power density
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
Primary- Side Switch
V
I
R
DC/DC Converters and Off-line UPS
High Current Switching
D25
D
Applications
DS(on)
DSS
S
ISOPLUS i5-Pak
G
S
=
= 2x140
≤ ≤ ≤ ≤ ≤
D
D = Drain
4.4 mΩ Ω Ω Ω Ω
55
DS99721 (01/07)
TM
Isolated back
surface
(IXTL)
A
V
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IXTL2X240N055T Summary of contents
Page 1
... GSS DSS DS DSS Note 1, 2 DS(on All ratings and parametric values are per each MOSFET die unless otherwise specified. © 2007 IXYS CORPORATION All rights reserved Advance Technical Information IXTL2x240N055T Maximum Ratings MΩ ± 20 140 75 650 JM 25 1.0 ≤ DSS 150 -55 ...
Page 2
... Characteristic Values T = 25°C unless otherwise specified) J Min. Typ. Max. 240 650 JM 1.0 40 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTL2x240N055T ISOPLUS i5-Pak TM (IXTL) Outline S Ω Leads: nC °C/W °C Note: 1. TAB 6 - Electrically isolated from the other pins ...