SI1539DL-T1-E3 Vishay, SI1539DL-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1539DL-T1-E3
• Description: MOSFET N/P-CH 30V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1539DL-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 480 mOhm @ 590mA, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 540mA, 420mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 10V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.48 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.54 A @ N Channel or 0.42 A @ P Channel
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 630mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 480mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Module Configuration: Dual
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1539DL-T1-E3TR

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2-4
Si1539DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-0.0
-0.2
-0.4
-0.6
0.4
0.2
0.1
0.01
1
0.1
-50
0.0
2
1
10
- 4
Source-Drain Diode Forward Voltage
-25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.2
V
SD
0
Single Pulse
T
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
J
- Temperature (_C)
= 150_C
25
10
- 3
0.6
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
75
0.8
10
100
- 2
T
J
= 25_C
1.0
125
Square Wave Pulse Duration (sec)
150
1.2
10
- 1
1
1.8
1.5
1.2
0.9
0.6
0.3
0.0
5
4
3
2
1
0
10
0
- 3
On-Resistance vs. Gate-to-Source Voltage
10
- 2
2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
V
P
GS
DM
JM
10
- Gate-to-Source Voltage (V)
Single Pulse Power
- T
- 1
t
A
1
4
Time (sec)
= P
t
2
DM
Z
1
thJA
100
thJA
t
t
S-21374—Rev. B, 12-Aug-02
1
2
(t)
Document Number: 71250
I
6
D
=400_C/W
= 0.59 A
10
N−CHANNEL
8
600
100
600
10